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Controllability of nitrogen doping, types of nitrogen-related defects, and their charge states in homoepitaxial diamond (001) crystals were investigated. Nitrogen was incorporated uniformly into the crystals, with a concentration variation of less than 10%. About 70% of the total nitrogen was substitutional nitrogen in a neutral charge state Ns0. Hydrogen was incorporated at approximately the same concentration as nitrogen. Both NV and NVH centers were predominantly negatively charged defect structures, i.e., NV− and NHV− centers. The concentrations of NHV− centers were less than 5% of the total nitrogen concentration. Nitrogen concentration in diamond crystals was controlled by changing the N/C gas ratio over a wide doping range from 10 ppb to 10 ppm. Nitrogen incorporation efficiency was found to be (1.5 ± 0.5) × 10−4 in this study.

権利情報:

• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Teraji, T., & Shinei, C. (2023). Nitrogen-related point defects in homoepitaxial diamond (001) freestanding single crystals. Journal of Applied Physics, 133(16). and may be found at https://doi.org/10.1063/5.0143652

キーワード: 12C, chemical vapor deposition, diamond, hydrogen, 15N nitrogen

刊行年月日: 2023-04-28

出版者: AIP Publishing

掲載誌:

• JOURNAL OF APPLIED PHYSICS (ISSN: 00218979) vol. 133 issue. 16 165101

研究助成金:

• MEXT Q-LEAP (JPMXS0118068379)
• JST CREST (JPMJCR1773)
• JST Moonshot R&D (JPMJMS2062)
• MIC R&D for construction of a global quantum cryptography network (JPMI00316)
• JSPS KAKENHI (No. 20H02187 and 20H05661)

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4613

公開URL: https://doi.org/10.1063/5.0143652

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更新時刻: 2024-07-31 08:30:09 +0900

MDRでの公開時刻: 2024-07-31 08:30:10 +0900