論文 Growth of [001]-oriented polycrystalline Heusler alloy thin films using [001]-textured Ag buffer layer on thermally oxidized Si substrate for spintronics applications

Dolly Taparia ORCID ; Taisuke T. Sasaki SAMURAI ORCID ; Tomoya Nakatani SAMURAI ORCID ; Hirofumi Suto SAMURAI ORCID ; Seiji Mitani SAMURAI ORCID ; Yuya Sakuraba SAMURAI ORCID

コレクション

引用
Dolly Taparia, Taisuke T. Sasaki, Tomoya Nakatani, Hirofumi Suto, Seiji Mitani, Yuya Sakuraba. Growth of [001]-oriented polycrystalline Heusler alloy thin films using [001]-textured Ag buffer layer on thermally oxidized Si substrate for spintronics applications. Journal of Applied Physics. 2024, 136 (12), . https://doi.org/10.1063/5.0218648
SAMURAI

説明:

(abstract)

To utilize highly spin-polarized Heusler alloys in practical spintronic devices, the realization of highly textured and structurally ordered polycrystalline thin films under limited annealing temperatures (TA) is critical. Compared to the natural [110]-texture of Heusler alloys, the [001]-texture is considered to be favorable for current-perpendicular-to-plane giant magnetoresistance devices due to the reduced lattice misfit with the face-centered-cubic (fcc) Ag spacer layers. In this study, we fabricated [001]-oriented polycrystalline Co2FeGa0.5Ge0.5 (CFGG) Heusler alloy films epitaxially grown on a [001]-oriented polycrystalline Ag buffer layer on thermally oxidized Si substrate, and the microstructure of the [001]-oriented Ag/CFGG bilayer film was investigated in detail. The [001]-oriented Ag films were obtained by introducing N2 into Ar during the sputtering process. The [001]-oriented CFGG films exhibited smooth interfaces, the B2 ordering, and a high saturation magnetization close to the theoretical value under a relatively low annealing at TA = 300 ℃, which are critical for industrial applications such as read heads of hard disk drives.

権利情報:

キーワード: Heusler alloy, giant magnetoresistance, thin film, textured growth, surfactant, read head, magnetic recording

刊行年月日: 2024-09-28

出版者: AIP Publishing

掲載誌:

  • Journal of Applied Physics (ISSN: 00218979) vol. 136 issue. 12

研究助成金:

  • Japan Society for the Promotion of Science 21H01608
  • Ministry of Education, Culture, Sports, Science and Technology JPJ011438

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4946

公開URL: https://doi.org/10.1063/5.0218648

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更新時刻: 2024-11-13 08:31:43 +0900

MDRでの公開時刻: 2024-11-13 08:31:43 +0900

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