# Cumulative effect of spectral downshifting, anti-reflection and space-charge region formation in enhancing the spectral response of self-powered silicon photodetectors on sensitisation with CdZnS/ZnS core-shell quantum dots https://mdr.nims.go.jp/datasets/6dba3831-08be-4fb1-bd5e-6dd12365ca75 ## File - [Revised manuscript_no highlight.docx](https://mdr.nims.go.jp/filesets/5df745ca-6522-4311-9b24-75483ca4e893/download) ([Detail](https://mdr.nims.go.jp/filesets/5df745ca-6522-4311-9b24-75483ca4e893.md)) - [Supplementary.docx](https://mdr.nims.go.jp/filesets/8900a57d-6af5-46c1-8377-e19435a52767/download) ([Detail](https://mdr.nims.go.jp/filesets/8900a57d-6af5-46c1-8377-e19435a52767.md)) ## Id 6dba3831-08be-4fb1-bd5e-6dd12365ca75 ## Local identifier ## Visibility open_to_public ## State published ## Created at 2024-08-01T03:50:22.866082Z ## Updated at 2026-01-14T23:30:04.437476Z ## Published at 2026-01-14T23:20:16.913561Z ## Doi https://doi.org/10.48505/nims.4615 ## First published url https://www.sciencedirect.com/science/article/abs/pii/S2211285524000259 ## Date published 2024-01-15 ## Recorded date published ## Resource type journal_article ## Manuscript type accepted_manuscript ## Collection ## Title - title: Cumulative effect of spectral downshifting, anti-reflection and space-charge region formation in enhancing the spectral response of self-powered silicon photodetectors on sensitisation with CdZnS/ZnS core-shell quantum dots title_type: original lang: en ## Description - description: Despite their ubiquity, Silicon (Si)-based photodetectors face intrinsic limitations that inhibit their performance, especially in the critical ultraviolet (UV) range. Downshifting of high energy photons by employing luminescent　quantum dots (QDs) has up to now been the commonest photon harvesting technique in Si photodetectors. This research article describes the monolithic integration of CdZnS/ZnS core-shell QDs with Si photodetectors to make use of the spectral downshifting effect. Silicon detectors sensitised with these QDs have shown remarkably enhanced responsivity and external quantum efficiency over a broad spectral range of 300 - 1100 nm. Apart from the spectral down-shifting process, the anti-reflection effect of the QD film and the formation of a space charge region at the Si-CdZnS/ZnS interface have also contributed to enhanced device performance. The additive effect of spectral downshifting, anti-reflection effects and heterojunction formation has given these QD-sensitized devices enhanced responsivity and EQE values of 345 mA/W and 0.5, markedly higher than the values of 110 mA/W and 0.15 seen in pristine devices. Given the notable enhancement demonstrated without the need for the application of epitaxial techniques, this study may assist in mitigating the inherent limitations of Si photodetectors. description_type: abstract lang: eng ## Creator - name: Kumaar Swamy Reddy Bapathi role: author organization: National Institute for Materials Science department: Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group ror: https://ror.org/026v1ze26 - name: Mostafa F. Abdelbar role: author organization: National Institute for Materials Science department: Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group ror: https://ror.org/026v1ze26 - name: Wipakorn Jevasuwan role: author orcid: https://orcid.org/0000-0001-9117-2497 organization: National Institute for Materials Science department: Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group ror: https://ror.org/026v1ze26 - name: Pramod H. Borse role: author organization: International Advanced Research Centre for Powder Metallurgy & New Materials - name: Sushmee Badhulika role: author organization: Indian Institute of Technology Hyderabad - name: Naoki Fukata role: author orcid: https://orcid.org/0000-0002-0986-8485 organization: National Institute for Materials Science department: Research Center for Materials Nanoarchitectonics (MANA) ror: https://ror.org/026v1ze26 ## Contact agent ## Publisher organization: Elsevier ## Managing organization ## Keyword - subject: Si photodetector schema: not_defined - subject: quantum dots schema: not_defined - subject: spectral downshifting schema: not_defined - subject: self-powered device schema: not_defined ## Rights - identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo start_date: 2024-01-15 end_date: 2026-01-15 ## Journal - title: Nano Energy issn: '22112855' volume: '122' start_page: 109277 end_page: 109277 ## Conference ## Related item ## Funding ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 5df745ca-6522-4311-9b24-75483ca4e893 filename: Revised manuscript_no highlight.docx content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document size: 8334884 md5: 912cf3a5938bcf99ce70d3cb52828247 - id: 8900a57d-6af5-46c1-8377-e19435a52767 filename: Supplementary.docx content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document size: 4500309 md5: f4f68d0e09bfa04bdcbb16029d560f57 ## Thumbnail fileset_id: 8900a57d-6af5-46c1-8377-e19435a52767 filename: Supplementary.docx