# Electrically Pumped <i>h</i>-BN Single-Photon Emission in van der Waals Heterostructure

https://mdr.nims.go.jp/datasets/6c485700-5d66-48b1-8135-3bc871f5d1c7

## File

- [2025A00248G_Electrically_pumped_hBN_Main.pdf](https://mdr.nims.go.jp/filesets/159bc4d8-6a84-4f00-ad65-9434f2c3dcf6/download) ([Detail](https://mdr.nims.go.jp/filesets/159bc4d8-6a84-4f00-ad65-9434f2c3dcf6.md))

## Id

6c485700-5d66-48b1-8135-3bc871f5d1c7

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-02T04:35:07.674375Z

## Updated at

2026-07-06T00:41:04.244823Z

## Published at

2026-07-06T03:30:04.714116Z

## Doi



## First published url

https://doi.org/10.1021/acsnano.4c10276

## Date published

2025-01-14

## Recorded date published

2025-1-14

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Electrically Pumped <i>h</i>-BN Single-Photon Emission in van der Waals Heterostructure
  title_type: original
  lang: en

## Description

- description: Atomic defects in solids offer a versatile basis to study and realize
    quantum phenomena and information science in various integrated systems. All-electrical
    pumping of single defects to create quantum light emission has been realized in
    several platforms including color centers in diamond and silicon carbide, which
    could lead to the circuit network of electrically triggered single-photon sources.
    However, a wide conduction channel which reduces the carrier injection per defect
    site has been a major obstacle. Here, we realize a device concept to construct
    electrically pumped single-photon emission using a van der Waals stacked structure
    with atomic plane precision. Defect-induced tunneling currents across graphene
    and NbSe2 electrodes sandwiching an atomically thin h-BN layer allow robust and
    persistent generation of nonclassical light from h-BN. The collected emission
    photon energies range between 1.4 and 2.9 eV, revealing the electrical excitation
    of a variety of atomic defects. By analyzing the dipole axis of observed emitters,
    we further confirm that emitters are crystallographic defect structures of h-BN
    crystal. Our work facilitates implementing efficient and miniaturized single-photon
    devices in van der Waals platforms toward applications in quantum optoelectronics.
  description_type: abstract
  lang: en

## Creator

- name: Mihyang Yu
  role: author
- name: Jeonghan Lee
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Jieun Lee
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Single-photon emission
  schema: not_defined
- subject: Hexagonal boron nitride (h-BN) defect
  schema: not_defined
- subject: Van der Waals heterostructure
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Article
    that appeared in final form in ACS Nano, copyright © 2024 American Chemical Society.
    To access the final published article, see https://doi.org/10.1021/acsnano.4c10276.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-12-29
end_date: 2025-12-29

## Journal

- title: ACS Nano
  issn: 1936086X
  volume: '19'
  issue: '1'
  start_page: 504
  end_page: 511

## Conference



## Related item



## Funding

- funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 2020R1A2C201133414
  funder_name: National Research Foundation of Korea
- identifier: 2021R1A5A103299614
  funder_name: National Research Foundation of Korea
- identifier: RS-2024-00356893
  funder_name: National Research Foundation of Korea
- identifier: RS-2024-00413957
  funder_name: National Research Foundation of Korea
- identifier: RS-2022-00164799
  funder_name: Institute for Information and Communications Technology Promotion
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- identifier: IBS-R009_D1
  funder_name: Institute for Basic Science

## Instrument



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## Specimen



## Chemical composition



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## Structural feature for specimen



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## Computational method



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## Fileset

- id: 159bc4d8-6a84-4f00-ad65-9434f2c3dcf6
  filename: 2025A00248G_Electrically_pumped_hBN_Main.pdf
  content_type: application/pdf
  size: 882232
  md5: 35917a6c416c113e1fcfb1c480bf8a2a

## Thumbnail

fileset_id: 159bc4d8-6a84-4f00-ad65-9434f2c3dcf6
filename: 2025A00248G_Electrically_pumped_hBN_Main.pdf