# Transport Spectroscopy of Ultraclean Tunable Band Gaps in Bilayer Graphene

https://mdr.nims.go.jp/datasets/6c151b9d-368b-46d4-b5de-50153f02f791

## File

- [Adv Elect Materials - 2022 - Icking - Transport Spectroscopy of Ultraclean Tunable Band Gaps in Bilayer Graphene.pdf](https://mdr.nims.go.jp/filesets/0371e1a2-81e1-4e40-b8cf-5def72483740/download) ([Detail](https://mdr.nims.go.jp/filesets/0371e1a2-81e1-4e40-b8cf-5def72483740.md))

## Id

6c151b9d-368b-46d4-b5de-50153f02f791

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-25T01:46:05.198857Z

## Updated at

2025-03-03T07:30:27.625321Z

## Published at

2025-03-03T07:30:27.748438Z

## Doi



## First published url

https://doi.org/10.1002/aelm.202200510

## Date published

2022-07-27

## Recorded date published

2022-11

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Transport Spectroscopy of Ultraclean Tunable Band Gaps in Bilayer Graphene
  title_type: original
  lang: en

## Description

- description: The importance of controlling both the charge carrier density and the
    band gap of a semicon- ductor cannot be overstated, as it opens the doors to a
    wide range of applications, including, e.g., highly-tunable transistors, photodetectors,
    and lasers. Bernal-stacked bilayer graphene is a unique van-der-Waals material
    that allows tuning the band gap by an out-of-plane electric field. Although the
    first evidence of the tunable gap was already found ten years ago, it took until
    recent to fab- ricate sufficiently clean heterostructures where the electrically
    induced gap could be used to fully suppress transport or confine charge carriers.
    Here, we present a detailed study of the tunable band gap in gated bilayer graphene
    characterized by temperature-activated transport and finite- bias spectroscopy
    measurements. The latter method allows comparing different gate materials and
    device technologies, which directly affects the disorder potential in bilayer
    graphene. We show that graphite-gated bilayer graphene exhibits extremely low
    disorder and as good as no subgap states resulting in ultraclean tunable band
    gaps up to 120 meV. The gaps are in good agreement with theory and allow complete
    current suppression making a wide range of semiconductor applications possible.
  description_type: abstract
  lang: und

## Creator

- name: Eike Icking
  role: author
- name: Luca Banszerus
  role: author
- name: Frederike Wörtche
  role: author
- name: Frank Volmer
  role: author
- name: Philipp Schmidt
  role: author
- name: Corinne Steiner
  role: author
- name: Stephan Engels
  role: author
- name: Jonas Hesselmann
  role: author
- name: Matthias Goldsche
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Christian Volk
  role: author
- name: Bernd Beschoten
  role: author
- name: Christoph Stampfer
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Band gap
  schema: not_defined
- subject: bilayer graphene
  schema: not_defined
- subject: semiconductor applications
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Electronic Materials
  issn: 2199160X
  volume: '8'
  issue: '11'
  article_number: '2200510'

## Conference



## Related item



## Funding

- identifier: '881603'
  funder_name: Graphene Flagship
- identifier: '820254'
  funder_name: European Research Council
- identifier: EXC 2004/1 ‐ 390534769
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: STA 1146/11‐1
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: BE 2441/9‐1
  funder_name: Deutsche Forschungsgemeinschaft

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 0371e1a2-81e1-4e40-b8cf-5def72483740
  filename: Adv Elect Materials - 2022 - Icking - Transport Spectroscopy of Ultraclean
    Tunable Band Gaps in Bilayer Graphene.pdf
  content_type: application/pdf
  size: 2356050
  md5: 13996180f780b985c3e9852e312d6699

## Thumbnail

fileset_id: 0371e1a2-81e1-4e40-b8cf-5def72483740
filename: Adv Elect Materials - 2022 - Icking - Transport Spectroscopy of Ultraclean
  Tunable Band Gaps in Bilayer Graphene.pdf