# Giant Light Emission Enhancement in Strain-Engineered InSe/MS<sub>2</sub> (M = Mo or W) van der Waals Heterostructures

https://mdr.nims.go.jp/datasets/6bd78084-7c6c-4a84-a6a8-ed4f35d3c703

## File

- [blundo-et-al-2025-giant-light-emission-enhancement-in-strain-engineered-inse-ms2-(m-mo-or-w)-van-der-waals.pdf](https://mdr.nims.go.jp/filesets/453499d6-bc09-4bef-ae75-18bc0b64f787/download) ([Detail](https://mdr.nims.go.jp/filesets/453499d6-bc09-4bef-ae75-18bc0b64f787.md))

## Id

6bd78084-7c6c-4a84-a6a8-ed4f35d3c703

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-27T10:54:46.198783Z

## Updated at

2026-03-02T23:30:04.532246Z

## Published at

2026-03-02T08:20:29.182342Z

## Doi



## First published url

https://doi.org/10.1021/acs.nanolett.4c04252

## Date published

2025-03-05

## Recorded date published

2025-3-5

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Giant Light Emission Enhancement in Strain-Engineered InSe/MS<sub>2</sub>
    (M = Mo or W) van der Waals Heterostructures
  title_type: original
  lang: en

## Description

- description: Two-dimensional crystals stack together through weak van der Waals
    (vdW) forces, offering unlim- ited possibilities to play with layer number, order
    and twist angle in vdW heterostructures (HSs). The realisation of high-performance
    optoelectronic devices, however, requires the achievement of specific band alignments,
    k-space matching between conduction band minima and valence band maxima, as well
    as efficient charge transfer between the constituent layers. Fine tuning mecha-
    nisms to design ideal HSs are lacking. Here we show that layer selective strain
    engineering can be exploited as an extra degree of freedom in vdW HSs, to engineer
    the band alignment and optical properties. To that end, strain is selectively
    applied to MS2 (M=Mo,W) monolayers in InSe/MS2 HSs. Indeed, InSe exhibits exceptional
    transport properties and thickness-tunable band gap ranging from near UV to near
    IR. However, it is characterised by a relatively weak photoluminescence (PL) efficiency.
    The application of strain to MS2 monolayers in InSe/MS2 HSs triggers a giant PL
    en- hancement of InSe, by two orders of magnitude. Resonant PL excitation measurements,
    supported by first-principle calculations, provide evidence of direct charge transfer
    from the strained MS2 MLs toward InSe. This significant PL enhancement achieved
    for InSe widens its range of applications for optoelectronics.
  description_type: abstract
  lang: und

## Creator

- name: Elena Blundo
  role: author
- name: Federico Tuzi
  role: author
- name: Marzia Cuccu
  role: author
- name: Michele Re Fiorentin
  role: author
- name: Giorgio Pettinari
  role: author
- name: Atanu Patra
  role: author
- name: Salvatore Cianci
  role: author
- name: Zakhar R. Kudrynskyi
  role: author
- name: Marco Felici
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Amalia Patanè
  role: author
- name: Maurizia Palummo
  role: author
- name: Antonio Polimeni
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: 'van der Waals heterostructures
    '
  schema: not_defined
- subject: 'strain engineering
    '
  schema: not_defined
- subject: 'photoluminescence enhancement
    '
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2025-02-05

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Nano Letters
  issn: '15306984'
  volume: '25'
  issue: '9'
  start_page: 3375
  end_page: 3382

## Conference



## Related item



## Funding

- identifier: World Premier International Research Center Initia
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 20H00354
  funder_name: Japan Society for the Promotion of Science
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- identifier: 20222HNMYE
  funder_name: Ministero dell'Universit? e della Ricerca
- identifier: ICSC
  funder_name: Ministero dell'Universit? e della Ricerca
- identifier: PE0000023
  funder_name: Ministero dell'Universit? e della Ricerca
- identifier: 101017733-NQSTI
  funder_name: Horizon 2020 Framework Programme
- identifier: Nottingham Research Fellowship
  funder_name: Nottingham University
- identifier: ISCRA
  funder_name: CINECA

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 453499d6-bc09-4bef-ae75-18bc0b64f787
  filename: blundo-et-al-2025-giant-light-emission-enhancement-in-strain-engineered-inse-ms2-(m-mo-or-w)-van-der-waals.pdf
  content_type: application/pdf
  size: 7547749
  md5: '0830403a5132b49897112054bf5fceee'

## Thumbnail

fileset_id: 453499d6-bc09-4bef-ae75-18bc0b64f787
filename: blundo-et-al-2025-giant-light-emission-enhancement-in-strain-engineered-inse-ms2-(m-mo-or-w)-van-der-waals.pdf