Current transport characterization and photovoltaic performance of Si nanopencil-based Schottky junction assisted with VOx as a hole-injection layer

Mohammed Abdelhameed; Mostafa F. Abdelbar; A.B. El Basaty; Wipakorn Jevasuwan; Kotaro Dai; Kei Shinotsuka; Yoshihisa Hatta; Naoki Fukata

doi:10.1016/j.micrna.2023.207519

論文 Current transport characterization and photovoltaic performance of Si nanopencil-based Schottky junction assisted with VOx as a hole-injection layer

Mohammed Abdelhameed ; Mostafa F. Abdelbar (National Institute for Materials Science) ; A.B. El Basaty ; Wipakorn Jevasuwan (National Institute for Materials Science) ; Kotaro Dai ; Kei Shinotsuka ; Yoshihisa Hatta ; Naoki Fukata (National Institute for Materials Science)

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Mohammed Abdelhameed, Mostafa F. Abdelbar, A.B. El Basaty, Wipakorn Jevasuwan, Kotaro Dai, Kei Shinotsuka, Yoshihisa Hatta, Naoki Fukata. Current transport characterization and photovoltaic performance of Si nanopencil-based Schottky junction assisted with VOx as a hole-injection layer. Micro and Nanostructures. 2023, 176 (), 207519. https://doi.org/10.1016/j.micrna.2023.207519

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(abstract)

Pencil-shaped silicon nanowires (SiNPs) were utilized in Schottky junction solar cells covered by sub-stoichiometric vanadium dioxide (VO2-x) to work as a hole injection layer. The asymmetry of nanopencils is responsible for their many useful properties, such as their ability to absorb and trap light over a wide spectrum. Dark current-voltage (I–V) curves for an Ag/VO2-x/SiNPs/Ti/Ag Schottky junction device were measured and analyzed across a temperature range of 298 – 358 K. The junction parameters were calculated in terms of thermionic emission theory at different temperatures from the (I–V) curves, including the ideality factor (n) and the barrier height ( φb), and were found to be 1.73 and 0.78 eV, respectively, at room temperature. In the forward bias regime, we found that thermionic emissions dominate at low voltages (V ≤ 0.12 V), space-charge-limited current controlled by a single trap state dominates at middle voltages (0.12 < V < 0.3 V), and space-charge-limited current regulated by a distribution of trap levels dominates at high voltages (V ≥ 0.3 V). The (C–V) measurements were used to calculate the built-in potential, which
was discovered to be 0.62 eV. Unless encapsulation is provided, PEDOT:PSS/SiNPs hybrid solar cells rapidly degrade under ambient conditions, whereas VO2-x/SiNPs solar cells are far more stable.

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