# Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

https://mdr.nims.go.jp/datasets/696c91ca-b24a-4979-911a-22fa5631e4b5

## File

- [Manuscript clean pdf file(Oshima).pdf](https://mdr.nims.go.jp/filesets/665a4bfd-41a6-47c8-8e26-2cca8e6ba50e/download) ([Detail](https://mdr.nims.go.jp/filesets/665a4bfd-41a6-47c8-8e26-2cca8e6ba50e.md))

## Id

696c91ca-b24a-4979-911a-22fa5631e4b5

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-07T06:15:45.838521Z

## Updated at

2024-01-22T00:41:33.543309Z

## Published at

2024-01-22T03:30:30.604324Z

## Doi

https://doi.org/10.48505/nims.4359

## First published url

https://doi.org/10.35848/1347-4065/ab6faf

## Date published

2020-02-01

## Recorded date published

2020-2-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: 相制御ELOによるα-Ga2O3のHVPE成長
  title_type: alternative
  lang: ja
- title: Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor
    phase epitaxy
  title_type: original
  lang: en

## Description

- description: We investigated the effect of mask materials on the epitaxial lateral
    overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an ELO technique
    that can markedly suppress abnormal growth and cracking to enable long-term growth
    on a wide mask, which is necessary to effectively improve the crystal quality.
    alpha-Ga2O3 islands with a diameter as large as approximately 25 um were grown
    by the developed ELO technique using polycrystalline kappa-Ga2O3. Transmission
    electron microscopy observation did not detect dislocations in the outermost part
    of the islands.
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
- name: Katsuaki Kawara
  role: author
- name: Takayoshi Oshima
  role: author
- name: Mitsuru Okigawa
  role: author
- name: Takashi Shinohe
  role: author

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: α-Ga2O3
  schema: not_defined
- subject: ELO
  schema: not_defined
- subject: HVPE
  schema: not_defined

## Rights

- description: "© 2020 The Japan Society of Applied Physics<br>\r\nThis is an author-created,
    un-copyedited version of an article accepted for publication/published\r\nin Japanese
    Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors
    or omissions in this version of the manuscript or\r\nany version derived from
    it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ab6faf."
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: JAPANESE JOURNAL OF APPLIED PHYSICS
  issn: '00214922'
  volume: '59'
  issue: '2'
  start_page: 25512
  end_page: 25512

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## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Process for specimen treatment



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## Fileset

- id: 665a4bfd-41a6-47c8-8e26-2cca8e6ba50e
  filename: Manuscript clean pdf file(Oshima).pdf
  content_type: application/pdf
  size: 1132043
  md5: 7250067c78002820c83f1a19456fe0a0

## Thumbnail

fileset_id: 665a4bfd-41a6-47c8-8e26-2cca8e6ba50e
filename: Manuscript clean pdf file(Oshima).pdf