# Au-Ge Eutectic Droplet Formation and Analyses for Selective-Area VLS Growth of Ge Nanowires on Si (111)

https://mdr.nims.go.jp/datasets/690d8589-5b4c-45f4-a980-1223bf8da7ac

## File

- [MNC2025_Abstract_Shuya_Yamaguchi_Hokkaido_Univ_submitted.pdf](https://mdr.nims.go.jp/filesets/b34271eb-e041-4cde-a33d-3bb735ec8a0b/download) ([Detail](https://mdr.nims.go.jp/filesets/b34271eb-e041-4cde-a33d-3bb735ec8a0b.md))

## Id

690d8589-5b4c-45f4-a980-1223bf8da7ac

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-11-20T23:48:42.766515Z

## Updated at

2025-11-21T07:30:07.431870Z

## Published at

2025-11-21T07:23:46.828269Z

## Doi

https://doi.org/10.48505/nims.5920

## First published url



## Date published



## Recorded date published



## Resource type

conference_presentation

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Au-Ge Eutectic Droplet Formation and Analyses for Selective-Area VLS Growth
    of Ge Nanowires on Si (111)
  title_type: alternative
  lang: ja
- title: Au-Ge Eutectic Droplet Formation and Analyses for Selective-Area VLS Growth
    of Ge Nanowires on Si (111)
  title_type: original
  lang: en

## Description

- description: In our study, we employ electron beam (EB) lithography and lift-off
    techniques to precisely position Au thin film patterns, aiming to establish site-selective
    (or selective-area), vertically aligned Ge NW growth via the VLS method using
    Au catalysts. In this paper, we characterize the behavior of Au catalysts, i.e.,
    Au–Ge eutectic droplets, on the initial stages of selective-area VLS growth of
    Ge NWs heterogeneously on Si (111) substrates. When GeH₄ was supplied to the circular
    Au thin film patterns, we observed that the Au patterns absorbed Ge while maintaining
    their shape by 4 min. At the gas supply time of 7 min, the entire catalyst transformed
    into an Au–Ge eutectic liquid, and then, subsequently aggregated into a hemispherical
    form. The BSE analyses also showed that the Ge concentration was possibly high
    at the center of Au-Ge droplets.
  description_type: abstract
  lang: eng

## Creator

- name: Shuya Yamaguchi
  role: author
  organization: RCIQE, Hokkaido University
- name: Shuma Yuzawa
  role: author
  organization: RCIQE, Hokkaido University
- name: Wipakorn Jevasuwan
  role: author
  orcid: https://orcid.org/0000-0001-9117-2497
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor
    Materials Field/Nanostructured Semiconducting Materials Group
- name: Naoki Fukata
  role: author
  orcid: https://orcid.org/0000-0002-0986-8485
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor
    Materials Field/Nanostructured Semiconducting Materials Group
- name: Shinjiro Hara
  role: author
  orcid: https://orcid.org/0000-0003-3047-3565
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor
    Materials Field/Semiconductor Nano-integration Group

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## Keyword

- subject: Semiconductor
  schema: not_defined
- subject: Chemical Vapor Depsition
  schema: not_defined
- subject: VLS, Selective-Area Growth
  schema: not_defined
- subject: Nanowires
  schema: not_defined

## Rights

- description: "©2025 The Japan Society of Applied Physics"
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal



## Conference

name: The 38th International Microprocesses and Nanotechnology Conference (MNC 2025)
start_date: 2025-11-17
end_date: 2025-11-20
identifier: https://imnc.jp/2025/

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## Fileset

- id: b34271eb-e041-4cde-a33d-3bb735ec8a0b
  filename: MNC2025_Abstract_Shuya_Yamaguchi_Hokkaido_Univ_submitted.pdf
  content_type: application/pdf
  size: 480182
  md5: 92b52e554507e5c60e7220c88d9c3e22

## Thumbnail

fileset_id: b34271eb-e041-4cde-a33d-3bb735ec8a0b
filename: MNC2025_Abstract_Shuya_Yamaguchi_Hokkaido_Univ_submitted.pdf