# Pt/GaN Schottky barrier height lowering by incorporated hydrogen

https://mdr.nims.go.jp/datasets/68dbabce-5659-480d-a9d9-9b9d8472847b

## File

- [Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_045002.pdf](https://mdr.nims.go.jp/filesets/e5a96012-9efd-4c4b-89f3-e1753bea4936/download) ([Detail](https://mdr.nims.go.jp/filesets/e5a96012-9efd-4c4b-89f3-e1753bea4936.md))

## Id

68dbabce-5659-480d-a9d9-9b9d8472847b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-04-09T22:39:43.251530Z

## Updated at

2024-04-10T07:30:21.873518Z

## Published at

2024-04-10T07:30:21.938338Z

## Doi



## First published url

https://doi.org/10.1149/2162-8777/ad3959

## Date published

2024-04-01

## Recorded date published

2024-4-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Pt/GaN Schottky barrier height lowering by incorporated hydrogen
  title_type: original
  lang: en

## Description

- description: Changes in the hydrogen-induced Schottky barrier height (ΦB) of Pt/GaN
    rectifiers fabricated on free-standing GaN substrates were investigated using
    current–voltage, capacitance–voltage, impedance spectroscopy, and current–time
    measurements. Ambient hydrogen lowered the ΦB and reduced the resistance of the
    semiconductor space–charge region while only weakly affecting the ideality factor,
    carrier concentration, and capacitance of the semiconductor space–charge region.
    The changes in the ΦB were reversible; specifically, the decrease in ΦB upon hydrogen
    exposure occurred quickly, but the recovery was slow. The results also showed
    that exposure to dry air and/or the application of a reverse bias to the Schottky
    electrodes accelerated the reversion compared with the case without the applied
    bias. The former case resulted in fast reversion because of the catalytic effect
    of Pt. The latter case, by contrast, suggested that hydrogen was incorporated
    into the Pt/GaN interface oxides as positive mobile charges. Moreover, both exposure
    to dry air and the application of a reverse bias increased the ΦB of an as-loaded
    sample from 0.91 to 1.07 eV, revealing that the ΦB of Pt/GaN rectifiers was kept
    lower as a result of hydrogen incorporation that likely occurred during device
    processing and/or storage.
  description_type: abstract
  lang: eng

## Creator

- name: 色川 芳宏
  role: author
  orcid: https://orcid.org/0000-0002-6531-4356
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Next-generation Semiconductor Group
  ror: https://ror.org/026v1ze26
- name: 大井 暁彦
  role: author
  orcid: https://orcid.org/0000-0003-4638-0099
  organization: National Institute for Materials Science
  department: Research Network and Facility Services Division/Materials Fabrication
    and Analysis Platform/Nanofabrication Unit
  ror: https://ror.org/026v1ze26
- name: 生田目 俊秀
  role: author
  orcid: https://orcid.org/0000-0002-5973-0230
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials
    Field/Thin Film Electronics Group
  ror: https://ror.org/026v1ze26
- name: 小出 康夫
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Next-generation Semiconductor Group
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: Electrochemical Society, Inc.

## Managing organization



## Keyword

- subject: GaN
  schema: not_defined
- subject: hydrogen
  schema: not_defined
- subject: Schottky barrier height
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: ECS Journal of Solid State Science and Technology
  issn: '21628777'
  volume: '13'
  issue: '4'
  start_page: 45002
  end_page: 45002

## Conference



## Related item



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Custom property



## Fileset

- id: e5a96012-9efd-4c4b-89f3-e1753bea4936
  filename: Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_045002.pdf
  content_type: application/pdf
  size: 899926
  md5: 21176ff9b9e290af1c10275d6f12cf97

## Thumbnail

fileset_id: e5a96012-9efd-4c4b-89f3-e1753bea4936
filename: Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_045002.pdf