3 R MoS 2 through Coulomb Engineering"> 3 R MoS 2 through Coulomb Engineering">

ジャーナル論文 Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3 R MoS 2 through Coulomb Engineering
Jing Liang (author) (この著者で検索)
;
Yuan Xie (author) (この著者で検索)
;
Dongyang Yang (author) (この著者で検索)
;
Shangyi Guo (author) (この著者で検索)
;
Kenji Watanabe (author) (この著者で検索)
ORCID SAMURAI ;
Takashi Taniguchi (author) (この著者で検索)
ORCID SAMURAI ;
Jerry I. Dadap (author) (この著者で検索)
;
David Jones (author) (この著者で検索)
;
Ziliang Ye (author) (この著者で検索)
コレクション

引用
Jing Liang, Yuan Xie, Dongyang Yang, Shangyi Guo, Kenji Watanabe, Takashi Taniguchi, Jerry I. Dadap, David Jones, Ziliang Ye. Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3 R MoS 2 through Coulomb Engineering. Physical Review X. 2025, 15 (2), 021081. https://doi.org/10.1103/physrevx.15.021081

説明:

(abstract)

High-speed, nonvolatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite significant progress in developing phase-change and ferroelectric materials, achieving highly efficient, reversible, rapid switching of optical properties has remained a challenge. Recently, sliding ferroelectricity has been discovered in 2D semiconductors, which also host strong excitonic effects. Here, we demonstrate that these materials enable nanosecond ferroelectric switching in the complex refractive index, substantially modulating their linear optical responses. The maximum index modulation reaches about 4, resulting in a relative reflectance change exceeding 85%. Both on and off switching occur within 2.5 ns, with switching energy at femtojoule levels. The switching mechanism is driven by tuning the excitonic peak splitting of a rhombohedral molybdenum disulfide bilayer in an engineered Coulomb screening environment. This new switching mechanism establishes a new direction for developing high-speed, nonvolatile optical memories and highly efficient, compact reconfigurable photonic devices. Additionally, the demonstrated imaging technique offers a rapid method to characterize domains and domain walls in 2D semiconductors with rhombohedral stacking.

権利情報:

キーワード: ferroelectric switching, nanosecond
, 3R-MoS2


刊行年月日: 2025-06-04

出版者: American Physical Society (APS)

掲載誌:

  • Physical Review X (ISSN: 21603308) vol. 15 issue. 2 021081

研究助成金:

  • Natural Sciences and Engineering Research Council of Canada
  • New Frontiers Initiative
  • Canada Foundation for Innovation
  • Canada First Research Excellence Fund
  • Max-Planck-Gesellschaft
  • University of Tokyo
  • Japan Society for the Promotion of Science 19H05790
  • Japan Society for the Promotion of Science 20H00354
  • Japan Society for the Promotion of Science 21H05233

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1103/physrevx.15.021081

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更新時刻: 2026-04-03 14:58:57 +0900

MDRでの公開時刻: 2026-04-03 16:27:42 +0900

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