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Excitonic states trapped in harmonic moir ́e wells in twisted heterobilayers is an excellent platform to study many-body interaction. However, the moir ́e exciton potential is primarily governed by the rigid twist angle, and its dynamic tuning thus remains a challenge - a knob which would be highly desirable for both scientific exploration and device applications. Using moir ́e trapped excitonic emission as a probe, here we demonstrate dynamic tuning of moir ́e potential in a WS2/WSe2 heterobilayer through two anharmonic perturbations, induced by gate voltage and optical power. First, we show that, dictated by the Poisson equation, a gate voltage can result in a local in-plane perturbing field with odd parity around the high-symmetry points. This allows us to simultaneously observe the first (linear) and second (parabolic) order Stark shift for the ground state and first excited state, respectively, of the moir ́e trapped exciton - an effect exactly opposite to conventional quantum-confined Stark shift. Depending on the degree of confinement, the moir ́e trapped excitons exhibit up to twenty-fold gate-tunability in the lifetime (100 ns to 5 ns). The second anharmonic tuning is demonstrated through exciton localization dependent dipolar repulsion, leading to an optical power-induced blueshift as high as ∼1 meV/μW, which is about 5 times higher than previous reports.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Excitonic states, moiré potential, gate voltage

刊行年月日: 2023-08-04

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 14 issue. 1 4679

研究助成金:

• DST | Science and Engineering Research Board
• Indian Space Research Organisation
• Ministry of Electronics and Information technology

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-023-40329-3

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更新時刻: 2025-02-11 12:30:44 +0900

MDRでの公開時刻: 2025-02-11 12:30:44 +0900