# Mechanism of ion track formation in silicon by much lower energy deposition than the formation threshold

https://mdr.nims.go.jp/datasets/66d773c7-db45-49f0-9c27-a7c7c85c9cb3

## File

- [ps_98_4_045701.pdf](https://mdr.nims.go.jp/filesets/40cfc6ef-6ffc-4414-a11d-ca56ec21c5e0/download) ([Detail](https://mdr.nims.go.jp/filesets/40cfc6ef-6ffc-4414-a11d-ca56ec21c5e0.md))

## Id

66d773c7-db45-49f0-9c27-a7c7c85c9cb3

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-04-28T04:03:52.308680Z

## Updated at

2024-01-05T13:12:20.673043Z

## Published at

2023-05-10T02:27:32.341349Z

## Doi



## First published url

https://doi.org/10.1088/1402-4896/acbbf5

## Date published

2023-04-01

## Recorded date published

2023-4-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Mechanism of ion track formation in silicon by much lower energy deposition
    than the formation threshold
  title_type: original
  lang: en

## Description

- description: The mechanism of the track formation in crystalline silicon (c-Si)
    under C60 ion irradiation with the medium energies of 1-9 MeV is discussed. In
    this energy region, the track formation was not expected because the energy E
    was much lower than the threshold of Eth = 17 MeV extrapolated in the past literature.
    The track formation was observed under 3 MeV C60 irradiation but not under 200
    MeV Xe ions, while both the irradiations have almost the same Se of 14 keV/nm
    but different nuclear stopping Sn. The involvement of Sn was strongly suggested
    for the track formation in c-Si at the sub-threshold Se. The inelastic thermal
    spike (i-TS) calculations cannot reproduce the high threshold of c-Si from the
    melting transition but the vaporization transition. The tracks formed by the melting
    transitions are assumed to quickly disappear by highly enhanced recrystallization
    in c-Si. Only the tracks formed by the vaporization survive. However, the Se dependence
    on the track radii formed under 1-9 MeV C60 irradiation was not reproduced by
    the vaporization transition but the melting one. Collisional processes due to
    high Sn value interrupt the efficient recrystallization in c-Si. Then the tracks
    formed by the melting transitions survive under 1-9 MeV C60 irradiation.
  description_type: abstract
  lang: eng

## Creator

- name: H Amekura
  role: author
  orcid: https://orcid.org/0000-0003-2148-8431
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: K Narumi
  role: author
- name: A Chiba
  role: author
- name: Y Hirano
  role: author
- name: K Yamada
  role: author
- name: S Yamamoto
  role: author
- name: N Ishikawa
  role: author
- name: N Okubo
  role: author
- name: M Toulemonde
  role: author
- name: Y Saitoh
  role: author

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: C60 ion
  schema: not_defined
- subject: ion track
  schema: not_defined
- subject: swift heavy ion
  schema: not_defined
- subject: silicon
  schema: not_defined
- subject: synergy effect
  schema: not_defined
- subject: track recrystallization
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: PHYSICA SCRIPTA
  issn: '00318949'
  volume: '98'
  issue: '4'
  start_page: 45701
  end_page: 45701

## Conference



## Related item



## Funding

- identifier: 22K04990
  funder_name: JSPS

## Instrument



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## Fileset

- id: 40cfc6ef-6ffc-4414-a11d-ca56ec21c5e0
  filename: ps_98_4_045701.pdf
  content_type: application/pdf
  size: 1100540
  md5: d6a01671586e6dabb1476f7c917e33fc

## Thumbnail

fileset_id: 40cfc6ef-6ffc-4414-a11d-ca56ec21c5e0
filename: ps_98_4_045701.pdf