# Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering

https://mdr.nims.go.jp/datasets/655e27d2-3f5f-4896-b12b-ab2785ba4cc7

## Files

- [MoS2 reservoir_Manuscript_clean_version.docx](https://mdr.nims.go.jp/filesets/55d625c7-e847-41d3-a882-df576c3e4f7e/download) ([Detail](https://mdr.nims.go.jp/filesets/55d625c7-e847-41d3-a882-df576c3e4f7e.md))

## Id

655e27d2-3f5f-4896-b12b-ab2785ba4cc7

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-11-14T06:22:12.928303Z

## Updated at

2025-11-17T03:30:04.115836Z

## Published at

2025-11-17T03:23:04.658374Z

## Doi

https://doi.org/10.48505/nims.5909

## First published url

https://doi.org/10.1063/5.0266816

## Date published

2025-10-23

## Recorded date published

2025-10-23

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved
    by combining reservoir states from current response and resonant Raman scattering
  title_type: original
  lang: en

## Description

- description: Reservoir computing (RC) is promising for achieving low power consumption
    neuromorphic devices. In this study, we have developed an all-solid-state electric
    double layer (EDL) transistor using multilayer MoS2 to realize high-performance
    physical reservoir computing (PRC). We have demonstrated high-performance of MoS2-based
    Raman-ion-gating reservoir (MoS2-RIGR), in which gate voltage-dependent resonant
    Raman scattering spectra of MoS2 were used as computational resources in addition
    to drain and gate current responses. Our device achieved good performance such
    as >97% accuracy in various nonlinear waveform transformations and 97.8% accuracy
    in solving a second-order nonlinear dynamic equation. Information processing capacity
    was evaluated to elucidate the origin of the high performance of our system.
  description_type: abstract
  lang: und

## Creator

- name: Yoshitaka Shingaya
  role: author
  orcid: https://orcid.org/0000-0002-5926-3302
  organization: National Institute for Materials Science
- name: Daiki Nishioka
  role: author
  orcid: https://orcid.org/0000-0002-3369-7700
  organization: National Institute for Materials Science
- name: Kazuya Terabe
  role: author
  orcid: https://orcid.org/0000-0003-3988-3456
  organization: National Institute for Materials Science
- name: Takashi Tsuchiya
  role: author
  orcid: https://orcid.org/0000-0002-6950-6160
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: physical reservoir computing
  schema: not_defined
- subject: resonant Raman scattering
  schema: not_defined
- subject: MoS2
  schema: not_defined
- subject: electric double layer transistor
  schema: not_defined
- subject: Raman-ion-gating reservoir
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Yoshitaka Shingaya, Daiki Nishioka, Kazuya Terabe, Takashi Tsuchiya; Enhanced
    computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining
    reservoir states from current response and resonant Raman scattering. Appl. Phys.
    Lett. 27 October 2025; 127 (17): 173503 and may be found at https://doi.org/10.1063/5.0266816.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '127'
  issue: '17'
  article_number: '173503'

## Conference



## Related item



## Funding

- identifier: JP24KJ0229
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMJPR23H4
  funder_name: Precursory Research for Embryonic Science and Technology
- identifier: JPMXP1224NM5282
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMXP1225NM5462
  funder_name: Ministry of Education, Culture, Sports, Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 55d625c7-e847-41d3-a882-df576c3e4f7e
  filename: MoS2 reservoir_Manuscript_clean_version.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 1234723
  md5: e7cfcd3ce6b7d5acc630b1bb10377486

## Thumbnail

fileset_id: 55d625c7-e847-41d3-a882-df576c3e4f7e
filename: MoS2 reservoir_Manuscript_clean_version.docx