# High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS2/i-GaN Vertical Heterojunction https://mdr.nims.go.jp/datasets/6396bc3a-6154-447f-af29-7e38a6b543dc ## File - [SangLW_Manuscript-ph-2023-01250a-revised-unmarked.docx](https://mdr.nims.go.jp/filesets/148d983d-1b22-49f4-bec5-6d44bef70117/download) ([Detail](https://mdr.nims.go.jp/filesets/148d983d-1b22-49f4-bec5-6d44bef70117.md)) ## Id 6396bc3a-6154-447f-af29-7e38a6b543dc ## Local identifier ## Visibility open_to_public ## State published ## Created at 2024-12-13T02:47:58.572480Z ## Updated at 2024-12-14T03:30:29.702524Z ## Published at 2024-12-14T03:30:29.902896Z ## Doi https://doi.org/10.48505/nims.5149 ## First published url https://doi.org/10.1021/acsphotonics.3c01250 ## Date published 2023-12-20 ## Recorded date published 2023-12-20 ## Resource type journal_article ## Manuscript type accepted_manuscript ## Collection ## Title - title: High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS2/i-GaN Vertical Heterojunction title_type: original lang: en ## Description - description: The wide bandgap semiconductor GaN has proven to be an excellent candidate for high-performance ultraviolet (UV) photodetectors owing to the direct bandgap, long lifetime, outstanding radiation hardness, and high thermal and chemical stability. To ultimately reduce the power consumption, self-powered operation is preferred. However, it is difficult to achieve a high responsivity when no external bias is applied for the reported self-powered Schottky, p–n junction, or hybrid GaN-based photodetectors. In this study, we report a UV photodetector with an ultrahigh photoresponsivity and fast response speed under zero-power consumption by integrating GaN with transition metal dichalcogenides (TMDs) MoS2 nanosheets through one-step hydrothermal and substrate compatible drop-casting method. Detailed characterization confirmed the formation of a 2D-MoS2/i-GaN vertical heterojunction with a few layers of hexagonal MoS2 nanosheets on a high-crystalline-quality GaN film. The photoresponsivity as high as 610 A/W and external quantum efficiency exceeding 2000% were achieved at the wavelength of 370 nm under zero external bias without sacrificing the response speed (∼ms). The specific detectivity was estimated to be 1.22 × 1014 Jones, and the UV/visible discrimination ratio was more than 2 orders of magnitude. The excellent performance of the 2D-MoS2/GaN-based vertical heterojunction UV photodetector could be attributed to the optimized heterointerface and the effective separation and transfer of photogenerated electron–hole pairs by the strong built-in electric field formed from the band alignment of the type-II heterojunction. This photodetector, with superior photoresponsivity at zero-power consumption, is promising for practical applications in areas such as sensing, imaging, and communication. description_type: abstract lang: en ## Creator - name: Sushmitha Veeralingam role: author - name: Liwen Sang role: author orcid: https://orcid.org/0000-0003-0946-1025 organization: National Institute for Materials Science ror: https://ror.org/026v1ze26 - name: Hong Pang role: author orcid: https://orcid.org/0000-0002-9286-082X organization: National Institute for Materials Science ror: https://ror.org/026v1ze26 - name: Renzhi Ma role: author orcid: https://orcid.org/0000-0001-7126-2006 organization: National Institute for Materials Science ror: https://ror.org/026v1ze26 - name: Sushmee Badhulika role: author ## Contact agent ## Publisher organization: American Chemical Society (ACS) ## Managing organization ## Keyword - subject: Gallium nitride schema: not_defined - subject: Molybdenum disulfide schema: not_defined - subject: Photodetector schema: not_defined - subject: Self-powered schema: not_defined - subject: Vertical heterojunction schema: not_defined - subject: Ultraviolet detection schema: not_defined ## Rights - description: This document is the Accepted Manuscript version of a Published Work that appeared in final form in High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS2/i-GaN Vertical Heterojunction, copyright © 2023 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsphotonics.3c01250 identifier: http://rightsstatements.org/vocab/InC/1.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo start_date: 2023-11-08 end_date: 2024-11-08 ## Journal - title: ACS Photonics issn: '23304022' volume: '10' issue: '12' start_page: 4408 end_page: 4416 ## Conference ## Related item ## Funding - funder_name: Ministry of Education, Culture, Sports, Science and Technology - identifier: JPMJPR19I7 funder_name: Precursory Research for Embryonic Science and Technology - funder_name: National Institute for Materials Science - funder_name: Indian Institute of Technology Hyderabad - identifier: 23H01359 funder_name: Japan Society for the Promotion of Science - identifier: 23KF0081 funder_name: Japan Society for the Promotion of Science ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 148d983d-1b22-49f4-bec5-6d44bef70117 filename: SangLW_Manuscript-ph-2023-01250a-revised-unmarked.docx content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document size: 1825620 md5: 86dbdee9fa9daa9791c2cbc35218ff46 ## Thumbnail fileset_id: 148d983d-1b22-49f4-bec5-6d44bef70117 filename: SangLW_Manuscript-ph-2023-01250a-revised-unmarked.docx