# Interface-Engineered Proton-Gated Oxide Transistors with Multitimescale Synaptic Plasticity

https://mdr.nims.go.jp/datasets/6319bb1e-e9b3-4dd1-a6fc-ff6262e74405

## File

- [2026_ACSAMI18_59455.pdf](https://mdr.nims.go.jp/filesets/b2c87daf-613e-49da-a121-f39c5ce3e788/download) ([Detail](https://mdr.nims.go.jp/filesets/b2c87daf-613e-49da-a121-f39c5ce3e788.md))

## Id

6319bb1e-e9b3-4dd1-a6fc-ff6262e74405

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-11-06T04:13:23.495835Z

## Updated at

2026-11-06T04:18:01.105997Z

## Published at

2026-11-06T08:03:36.380037Z

## Doi



## First published url

https://doi.org/10.1021/acsami.6c14036

## Date published

2026-11-04

## Recorded date published

2026-11-4

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Interface-Engineered Proton-Gated Oxide Transistors with Multitimescale Synaptic
    Plasticity
  title_type: original
  lang: en

## Description

- description: Ion-gated transistors that mimic biological synapses are essential
    for energy-efficient neuromorphic hardware capable of adaptive learning and sensory
    processing. However, achieving both high-speed operation and stable memory in
    silicon-compatible platforms remains challenging due to the trade-off between
    ionic mobility and retention characteristics. In this work, we developed proton-gated
    synaptic transistors composed of electron-beam (EB) deposited SiO2 electrolyte
    and sputtered WO3 channel. Low film density with oxygen deficiency of EB-deposited
    SiO2 enables gate-controlled proton intercalation and de-intercalation, producing
    versatile synaptic plasticity of continuously modulating the WO3 channel conductance.
    The devices exhibit a wide time response range (pulse widths from 100 ms to 50
    µs) and a large dynamic range (>103) with a retention time of ~18 s, successfully
    emulating short-term plasticity and nociceptor-like sensory behaviors such as
    threshold spiking, relaxation, and sensitization. They also achieve ~90% image
    recognition accuracy and low power consumption of ~200 fJ for a single synaptic
    event. Furthermore, an introduction of a thin Al2O3 layer between the electrolyte
    and channel effectively suppresses proton back-diffusion, extending the retention
    time to ~860 s. This also results in high recognition accuracy across a wide range
    of pulse widths, from sub-seconds to sub-milliseconds. By integrating two transistors
    with different retention times into a “one-transistor–one-synapse” architecture,
    we further demonstrated hardware-level temporal control of synaptic plasticity
    that enables event-driven learning, forgetting, and memory without altering input
    stimuli. These results indicate that all-oxide proton-gated transistors incorporating
    interface engineering provide a neuromorphic platform that enables highly flexible
    designs with excellent synaptic characteristics.
  description_type: abstract
  lang: und

## Creator

- name: Rupam Mandal
  role: author
- name: Kazuya Terabe
  role: author
  orcid: https://orcid.org/0000-0003-3988-3456
- name: Tohru Tsuruoka
  role: author
  orcid: https://orcid.org/0000-0002-4322-4309

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Ion-gated transistor
  schema: not_defined
- subject: synaptic plasticity
  schema: not_defined
- subject: proton intercalation/de-intercalation
  schema: not_defined
- subject: metal oxides
  schema: not_defined
- subject: interface engineering
  schema: not_defined
- subject: neuromorphic computing
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: ACS Applied Materials & Interfaces
  issn: '19448244'
  volume: '18'
  issue: '43'
  start_page: 59455
  end_page: 59467

## Conference



## Related item



## Funding

- identifier: 24K02917
  funder_name: Japan Society for the Promotion of Science
- identifier: JPJ004596
  funder_name: Ministry of Defense- Japan

## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: b2c87daf-613e-49da-a121-f39c5ce3e788
  filename: 2026_ACSAMI18_59455.pdf
  content_type: application/pdf
  size: 6797917
  md5: c7807f8a0fb21ea18e91065bef4226b4

## Thumbnail

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filename: 2026_ACSAMI18_59455.pdf