# Fluorinated Graphene Contacts and Passivation Layer for MoS            <sub>2</sub>            Field Effect Transistors

https://mdr.nims.go.jp/datasets/61e13892-c5ff-4355-9f47-759e3f6d76a8

## File

- [Adv Elect Materials - 2022 - Ryu - Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors.pdf](https://mdr.nims.go.jp/filesets/a82bd0d4-47ee-4944-b114-82b82c0af63f/download) ([Detail](https://mdr.nims.go.jp/filesets/a82bd0d4-47ee-4944-b114-82b82c0af63f.md))

## Id

61e13892-c5ff-4355-9f47-759e3f6d76a8

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-25T01:52:31.392918Z

## Updated at

2025-02-25T23:30:36.257580Z

## Published at

2025-02-25T23:30:36.344884Z

## Doi



## First published url

https://doi.org/10.1002/aelm.202101370

## Date published

2022-03-09

## Recorded date published

2022-10

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Fluorinated Graphene Contacts and Passivation Layer for MoS            <sub>2</sub>            Field
    Effect Transistors
  title_type: original
  lang: en

## Description

- description: Realizing a future of 2D semiconductor-based devices requires new approaches
    to channel passivation and nondestructive contact engineering. Here, a facile
    one-step technique is shown that simultaneously utilizes mono- layer fluorinated
    graphene (FG) as the passivation layer and contact buffer layer to 2D semiconductor
    transistors. Monolayer graphene is transferred onto the MoS2, followed by fluorination
    by XeF2 gas exposure. Metal elec- trodes for source and drain are fabricated on
    top of FG-covered MoS2 regions. The MoS2 transistor is perfectly passivated by
    insulating FG layer and, in the contacts, FG layer also acts as an efficient charge
    injection layer, leading to the formation of Ohmic contacts and high carrier mobility
    of up to 64 cm2 V−1 s−1. This work shows a novel strategy for simultaneous fabrication
    of passivation layer and low-resistance contacts by using ultrathin functionalized
    graphene, which has applications for high performance 2D semiconductor integrated
    electronics.
  description_type: abstract
  lang: und

## Creator

- name: Huije Ryu
  role: author
- name: Dong‐Hyun Kim
  role: author
- name: Junyoung Kwon
  role: author
- name: Sang Kyu Park
  role: author
- name: Wanggon Lee
  role: author
- name: Hyungtak Seo
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: SunPhil Kim
  role: author
- name: Arend M. van der Zande
  role: author
- name: Jangyup Son
  role: author
- name: Gwan‐Hyoung Lee
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Passivation layer
  schema: not_defined
- subject: fluorinated graphene
  schema: not_defined
- subject: MoS2 transistors
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Electronic Materials
  issn: 2199160X
  volume: '8'
  issue: '10'
  article_number: '2101370'

## Conference



## Related item



## Funding

- identifier: NRF‐2021R1A2C3014316
  funder_name: National Research Foundation of Korea
- identifier: NRF‐2018M3D1A1058793
  funder_name: National Research Foundation of Korea

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: a82bd0d4-47ee-4944-b114-82b82c0af63f
  filename: Adv Elect Materials - 2022 - Ryu - Fluorinated Graphene Contacts and Passivation
    Layer for MoS2 Field Effect Transistors.pdf
  content_type: application/pdf
  size: 972400
  md5: 172dfa5e31820583a817f39cf599d4ee

## Thumbnail

fileset_id: a82bd0d4-47ee-4944-b114-82b82c0af63f
filename: Adv Elect Materials - 2022 - Ryu - Fluorinated Graphene Contacts and Passivation
  Layer for MoS2 Field Effect Transistors.pdf