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説明:

Antiferromagnetic Mn3X (X = Sn, Ge, Ga, and Pt) possessing non-collinear spin structures with Kagome lattices have attracted increasing interest because of their unique properties, such as significant anomalous Hall and magneto-optical Kerr effects. Recent advances in spintronic devices that use non-collinear antiferromagnets have inspired research into various materials for exploiting their potential. In this study, we investigated the magnetic and magneto-transport properties of (1-100)-oriented epitaxial and polycrystalline Mn3Ge films deposited by magnetron sputtering. Anomalous Hall conductivity monotonically decreases with temperature in an epitaxial Mn3Ge film, whereas the polycrystalline sample demonstrates a different trend. Furthermore, we obtained a large in-Kagome-plane uniaxial magnetic anisotropy of epitaxial Mn3Ge above ambient temperature, thereby leading to higher thermal stability and robustness against the external field. Our results indicate the potential of Mn3Ge for future functional, high-speed, and high-density spintronics devices using antiferromagnets.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Spintronics, Antiferromagnets, Anomalous Hall effect

刊行年月日: 2024-07-01

出版者: AIP Publishing

掲載誌:

• APL Materials (ISSN: 2166532X) vol. 12 issue. 7 071110

研究助成金:

• Japan Society for the Promotion of Science 22K14558 (ナノスケール微細ノンコリニア反強磁性体におけるスピントルクとスピンゆらぎ)
• Japan Society for the Promotion of Science 22KK0072 (反強磁性ナノ構造における超高速物性の解明)
• Japan Society for the Promotion of Science 24K00952 (磁気スキルミオンを用いた新規機能性デバイスの創出)
• Japan Society for the Promotion of Science 24H00039 (コヒーレントスピンダイナミクスを用いた省エネ・創エネデバイス)
• Casio Science Promotion Foundation 44-4 (磁性ワイル半金属のトポロジーに由来する駆動力を用いた磁気秩序の高効率制御法の確立とプロトタイプ実証)
• Iketani Science and Technology Foundation 0361247-A (ナノ構造カイラル反強磁性体の検出信号の高出力化および高速電流制御)

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0217710

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更新時刻: 2024-07-18 08:30:09 +0900

MDRでの公開時刻: 2024-07-18 08:30:09 +0900