# Gap opening of image potential state on reconstructed Ir(001) surface

https://mdr.nims.go.jp/datasets/60ab20b2-4e7d-4c16-ae52-d48dc7707c7d

## File

- [Amrit-2025-Gap opening of image potential stat.pdf](https://mdr.nims.go.jp/filesets/1e2e688f-4f37-4cea-be3a-1f71ba9cfbc1/download) ([Detail](https://mdr.nims.go.jp/filesets/1e2e688f-4f37-4cea-be3a-1f71ba9cfbc1.md))

## Id

60ab20b2-4e7d-4c16-ae52-d48dc7707c7d

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-06-24T01:47:59.668447Z

## Updated at

2025-06-24T23:30:32.874068Z

## Published at

2025-06-24T23:22:53.263780Z

## Doi



## First published url

https://doi.org/10.1103/46k5-fft2

## Date published

2025-06-23

## Recorded date published

2025-6

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Gap opening of image potential state on reconstructed Ir(001) surface
  title_type: original
  lang: en

## Description

- description: We have investigated the image potential states (IPSs) for the unreconstructed
    Ir(001)-(1 × 1) and the reconstructed Ir(001)-(5 × 1) surfaces by using two-photon
    photoemission spectroscopy. We reveal that the Ir(001)-(5 × 1) reconstructed surface
    covered by Xe adatoms exhibits a band gap of 100 meV, which arises from the new
    periodic potential created by the reconstruction, whereas no band gap was observed
    on the Ir(001)-(1 × 1) surface within the measured momentum range. The experimental
    results are compared with the theoretical ones obtained within density functional
    theory for both the clean and Xe-covered Ir(001)-(5 × 1) reconstructed surfaces.
    The planar averaged charge density distributions of the IPS for both the surfaces
    show that the Xe adsorption does not significantly alter the positions of charge
    density maxima, which rationalizes why the band gap arising from the substrate
    superlattice potential does not change significantly upon Xe adsorption. The agreement
    between the experimentally observed band gap for the IPS on the Xe-covered surface
    and the theoretical calculations highlights the robustness of IPS behavior under
    Xe adsorption.
  description_type: abstract
  lang: und

## Creator

- name: Pratyay Amrit
  role: author
- name: Naoya Kawakami
  role: author
- name: Noriaki Takagi
  role: author
- name: Hiroshi Ishida
  role: author
- name: Chun-Liang Lin
  role: author
- name: Ryuichi Arafune
  role: author
  orcid: https://orcid.org/0000-0003-4371-6116

## Contact agent



## Publisher

organization: American Physical Society (APS)

## Managing organization



## Keyword

- subject: Image potential states
  schema: not_defined
- subject: Surface reconstruction
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Physical Review Research
  issn: '26431564'
  volume: '7'
  issue: '2'

## Conference



## Related item



## Funding

- identifier: 22H01960
  funder_name: 日本学術振興会
  description: 基盤B

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 1e2e688f-4f37-4cea-be3a-1f71ba9cfbc1
  filename: Amrit-2025-Gap opening of image potential stat.pdf
  content_type: application/pdf
  size: 4355447
  md5: 342c7212372ef4c57f04a90441b19da0

## Thumbnail

fileset_id: 1e2e688f-4f37-4cea-be3a-1f71ba9cfbc1
filename: Amrit-2025-Gap opening of image potential stat.pdf