# Dual-Gate Anti-Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations

https://mdr.nims.go.jp/datasets/6042ffb9-7ac7-490e-a2a1-1d201ac4c777

## File

- [Adv Elect Materials - 2022 - Shingaya - Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2 WSe2 Heterojunction for-2.pdf](https://mdr.nims.go.jp/filesets/5b68166c-befc-40e8-9fa1-52bac173f473/download) ([Detail](https://mdr.nims.go.jp/filesets/5b68166c-befc-40e8-9fa1-52bac173f473.md))

## Id

6042ffb9-7ac7-490e-a2a1-1d201ac4c777

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-09-17T01:31:18.178011Z

## Updated at

2024-09-18T03:30:12.149064Z

## Published at

2024-09-18T03:30:12.272642Z

## Doi



## First published url

https://doi.org/10.1002/aelm.202200704

## Date published

2022-09-25

## Recorded date published

2023-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Dual-Gate Anti-Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction
    for Reconfigurable Logic Operations
  title_type: original
  lang: en

## Description

- description: A dual-gate anti-ambipolar transistor (AAT) with a two-dimensional
    ReS2 and WSe2 heterojunction was developed. The characteristic Λ-shaped transfer
    curves yielded by the bottom-gate voltage were effectively controlled by the top-gate
    voltage. This feature was applied to logic operations, with the bottom- and top-gate
    voltages acting as two input signals and the drain current (Id) monitored as an
    output signal. Importantly, a single dual-gate AAT exhibited all the two-input
    logic operations (AND, OR, XOR, NAND, NOR, and XNOR) under optimized input voltages.
    Additionally, we achieved drain voltage (Vd)-induced switching between AND and
    OR logic operations. These features are advantageous for simplifying circuit design.
  description_type: abstract
  lang: eng

## Creator

- name: Yoshitaka Shingaya
  role: author
  orcid: https://orcid.org/0000-0002-5926-3302
  organization: National Institute for Materials Science
- name: Amir Zulkefli
  role: author
  orcid: https://orcid.org/0000-0001-7013-9962
  organization: National Institute for Materials Science
- name: Takuya Iwasaki
  role: author
  orcid: https://orcid.org/0000-0002-1103-2433
  organization: National Institute for Materials Science
- name: Ryoma Hayakawa
  role: author
  orcid: https://orcid.org/0000-0002-1442-8230
  organization: National Institute for Materials Science
- name: Shu Nakaharai
  role: author
  orcid: https://orcid.org/0000-0002-6329-3942
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Yutaka Wakayama
  role: author
  orcid: https://orcid.org/0000-0002-0801-8884
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: 2D materials
  schema: not_defined
- subject: antiambipolar transistors
  schema: not_defined
- subject: reconfigurable logic circuits
  schema: not_defined
- subject: ReS2
  schema: not_defined
- subject: WSe2
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Electronic Materials
  issn: 2199160X
  volume: '9'
  issue: '1'
  article_number: '2200704'

## Conference



## Related item



## Funding

- identifier: 21F21052
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 5b68166c-befc-40e8-9fa1-52bac173f473
  filename: Adv Elect Materials - 2022 - Shingaya - Dual‐Gate Anti‐Ambipolar Transistor
    with Van der Waals ReS2 WSe2 Heterojunction for-2.pdf
  content_type: application/pdf
  size: 1729206
  md5: 9fee69fa4283d99b0a4e774dcdf2851f

## Thumbnail

fileset_id: 5b68166c-befc-40e8-9fa1-52bac173f473
filename: Adv Elect Materials - 2022 - Shingaya - Dual‐Gate Anti‐Ambipolar Transistor
  with Van der Waals ReS2 WSe2 Heterojunction for-2.pdf