# Epitaxial lateral overgrowth of            <i>m</i>            -plane α-Ga            <sub>2</sub>            O            <sub>3</sub>            by halide vapor phase epitaxy

https://mdr.nims.go.jp/datasets/5fc04f82-f9ef-4cf6-ab7c-da83e64ab86e

## File

- [Epitaxial lateral overgrowth of m-plane -Ga2O3 by halide vapor phase epitaxy-1.pdf](https://mdr.nims.go.jp/filesets/86cee8c2-4a58-4b4d-a163-9211f3cfad05/download) ([Detail](https://mdr.nims.go.jp/filesets/86cee8c2-4a58-4b4d-a163-9211f3cfad05.md))

## Id

5fc04f82-f9ef-4cf6-ab7c-da83e64ab86e

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-04-22T23:08:29.697652Z

## Updated at

2025-04-23T03:30:12.932489Z

## Published at

2025-04-23T03:17:46.387160Z

## Doi



## First published url

https://doi.org/10.1080/14686996.2025.2485869

## Date published

2025-12-31

## Recorded date published

2025-12-31

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Epitaxial lateral overgrowth of            <i>m</i>            -plane α-Ga            <sub>2</sub>            O            <sub>3</sub>            by
    halide vapor phase epitaxy
  title_type: original
  lang: en

## Description

- description: We demonstrated the epitaxial lateral overgrowth of m-plane α-Ga2O3
    by halide vapor phase epitaxy. An m-plane α-Ga2O3/sapphire template with a patterned
    SiO2 mask was used as the substrate. The growth result on a radial spoke-wheel
    patterned mask revealed that the lateral growth rate was fastest when the spoke
    was perpendicular to the 〈11-23〉 direction. In this case, the lateral-to-vertical
    growth rate ratio (L/V ratio), where L was defined as the increase rate of the
    width of the line-shaped α-Ga2O3 island, was as large as 5.8. The L/V ratio was
    greater than that reported for m-direction stripe mask on a-plane α-Ga2O3 by a
    factor of 3.3, and than that reported for a-direction stripe mask on c- and m-plane
    α-Ga2O3 by a factor of 13. We then performed the ELO of α-Ga2O3 on a stripe mask
    (window/mask widths of 2.5 um/7.5 um) along the direction perpendicular to 〈11-23〉.
    As a result, line-shaped α-Ga2O3 islands with a flat-triangular cross-section
    selectively nucleated on the window areas, and they coalesced with each other
    to make a compact film. TEM observation revealed that the dislocation density
    in the laterally grown area dramatically decreased because the propagation of
    the dislocations in the seed layer was effectively blocked by the mask.
  description_type: abstract
  lang: und

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
- name: Takashi Shinohe
  role: author
  orcid: https://orcid.org/0009-0000-5559-1432

## Contact agent



## Publisher

organization: Informa UK Limited

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: dislocation
  schema: not_defined
- subject: ELO
  schema: not_defined
- subject: HVPE
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '26'
  issue: '1'

## Conference



## Related item



## Funding

- identifier: JPJ004596
  funder_name: Innovative Science and Technology Initiative for Security

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 86cee8c2-4a58-4b4d-a163-9211f3cfad05
  filename: Epitaxial lateral overgrowth of m-plane -Ga2O3 by halide vapor phase epitaxy-1.pdf
  content_type: application/pdf
  size: 5533882
  md5: 798f860ceebd7feb9142ff26bd5466ed

## Thumbnail

fileset_id: 86cee8c2-4a58-4b4d-a163-9211f3cfad05
filename: Epitaxial lateral overgrowth of m-plane -Ga2O3 by halide vapor phase epitaxy-1.pdf