# Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors https://mdr.nims.go.jp/datasets/5fbd9a6d-bd85-4ad3-b43b-0eacba985fbc ## File - [2024A00062G_Manuscript_Determining the electron scattering from interfacial Coulomb scatterers in two-dimensional transistors.pdf](https://mdr.nims.go.jp/filesets/55a1ebbd-0912-4b7e-8089-8ffc81c0c905/download) ([Detail](https://mdr.nims.go.jp/filesets/55a1ebbd-0912-4b7e-8089-8ffc81c0c905.md)) ## Id 5fbd9a6d-bd85-4ad3-b43b-0eacba985fbc ## Local identifier ## Visibility open_to_public ## State published ## Created at 2025-10-14T08:41:26.868134Z ## Updated at 2025-10-21T06:50:45.754092Z ## Published at 2025-10-21T06:43:32.190917Z ## Doi https://doi.org/10.48505/nims.5809 ## First published url https://doi.org/10.1021/acsami.3c14312 ## Date published 2024-01-10 ## Recorded date published 2024-1-10 ## Resource type journal_article ## Manuscript type accepted_manuscript ## Collection ## Title - title: Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors title_type: original lang: en ## Description - description: Two-dimensional (2D) transistors are promising for potential applications in next-generation semiconductor chips. Owing to the atomically thin thickness of 2D materials, the carrier scattering from interfacial Coulomb scatterers greatly suppresses the carrier mobility and hampers transistor performance. However, a feasible method to quantitatively determine relevant Coulomb scattering parameters from interfacial long-range scatterers is largely lacking. Here, we demonstrate a method to determine the Coulomb scattering strength and the density of Coulomb scattering centers in InSe transistors by comprehensively analyzing the low-frequency noise and transport characteristics. Moreover, the relative contributions from long-range and short-range scattering in the InSe transistors can be distinguished. This method is employed to make InSe transistors consisting of various interfaces a model system, revealing the profound effects of different scattering sources on transport characteristics and low-frequency noise. Quantitatively accessing the scattering parameters of 2D transistors provides valuable insight into engineering the interfaces of a wide spectrum of ultrathin-body transistors for high-performance electronics. description_type: abstract lang: en ## Creator - name: Yi-Te Lee role: author - name: Yu-Ting Huang role: author - name: Shao-Pin Chiu role: author - name: Ruey-Tay Wang role: author - name: Takashi Taniguchi role: author orcid: https://orcid.org/0000-0002-1467-3105 organization: National Institute for Materials Science - name: Kenji Watanabe role: author orcid: https://orcid.org/0000-0003-3701-8119 organization: National Institute for Materials Science - name: Raman Sankar role: author - name: Chi-Te Liang role: author - name: Wei-Hua Wang role: author - name: Sheng-Shiuan Yeh role: author - name: Juhn-Jong Lin role: author ## Contact agent ## Publisher organization: American Chemical Society (ACS) ## Managing organization ## Keyword - subject: electron scattering schema: not_defined - subject: 2D materials schema: not_defined - subject: Coulomb scattering strength schema: not_defined - subject: low-frequency noise schema: not_defined - subject: indium selenide schema: not_defined - subject: interfacial Coulomb scatterers schema: not_defined - subject: 2D transist schema: not_defined ## Rights - description: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © 2023 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.3c14312. identifier: http://rightsstatements.org/vocab/InC/1.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo start_date: 2023-12-19 end_date: 2024-12-19 ## Journal - title: ACS Applied Materials & Interfaces issn: '19448252' volume: '16' issue: '1' start_page: 1066 end_page: 1073 ## Conference ## Related item ## Funding - identifier: AS-iMATE-109-13 funder_name: Academia Sinica - identifier: 20H00354 funder_name: Japan Society for the Promotion of Science - identifier: 21H05233 funder_name: Japan Society for the Promotion of Science - identifier: 23H02052 funder_name: Japan Society for the Promotion of Science - identifier: 109-2112-M-001-041-MY3 funder_name: National Science and Technology Council - identifier: 110-2112-M-A49- 033-MY3 funder_name: National Science and Technology Council - identifier: 110-2112-M001-065-MY3 funder_name: National Science and Technology Council - identifier: 111-2119- M-007-005 funder_name: National Science and Technology Council - identifier: 112-2119-M-002-014 funder_name: National Science and Technology Council - identifier: 110-2112-M-A49-015 funder_name: National Science and Technology Council - funder_name: Ministry of Education, Taiwan - funder_name: World Premier International Research Center Initiative ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 55a1ebbd-0912-4b7e-8089-8ffc81c0c905 filename: 2024A00062G_Manuscript_Determining the electron scattering from interfacial Coulomb scatterers in two-dimensional transistors.pdf content_type: application/pdf size: 1068617 md5: c53c9067c0960137880ac310a24cd383 ## Thumbnail fileset_id: 55a1ebbd-0912-4b7e-8089-8ffc81c0c905 filename: 2024A00062G_Manuscript_Determining the electron scattering from interfacial Coulomb scatterers in two-dimensional transistors.pdf