# Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing

https://mdr.nims.go.jp/datasets/5ebf6971-7517-482a-ad74-660011e23a25

## Files

- [Acceptor activation of Mg-doped GaN – Effects of N2-O2 vs N2 as ambient gas during annealing.pdf](https://mdr.nims.go.jp/filesets/c1bc8708-dc5f-44be-a5b4-0415540402f2/download) ([Detail](https://mdr.nims.go.jp/filesets/c1bc8708-dc5f-44be-a5b4-0415540402f2.md))

## Id

5ebf6971-7517-482a-ad74-660011e23a25

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-09-27T00:30:09.522181Z

## Updated at

2024-01-05T13:12:15.475855Z

## Published at

2023-09-28T04:30:15.801290Z

## Doi

https://doi.org/10.48505/nims.4233

## First published url

https://doi.org/10.1063/5.0139114

## Date published

2023-07-21

## Recorded date published

2023-7-21

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas
    during annealing
  title_type: original
  lang: en

## Description

- description: 'Here, we investigate the effects of O2:N2 (1:1) as ambient gas as
    compared with pure N2 during activation annealing of Mg as p-type doping in GaN
    layers grown by MOCVD. The purpose is to understand the impact of O2 on the resulting
    free hole concentration and hole mobility using SIMS, XRD, STEM, AFM and Hall
    effect measurements. Even though the presence of O2 in the ambient gas during
    annealing is very effective in reducing the H level of the Mg-doped GaN layers,
    the maximum achievable hole concentration and mobility is still higher with pure
    N2. The differences are explained by an in-diffusion of O to the GaN layer acting
    as n-dopant and thus giving rise to a compensation effect. The Mg-H complexes
    at substitutional (MgGa), i.e., the electrically active acceptor sites that provide
    free holes, are preferentially activated by annealing with N2 only as ambient
    gas, while annealing with O2:N2 (1:1) also dissociates electrically inactive Mg-H
    complexes resulting in much less residual H. At the lower growth pressure of 150
    mbar compared to higher growth pressure of 300 mbar, an increasing carbon incorporation
    leads to a compensation effect drastically reducing the free hole concentration
    while the mobility is unaffected. '
  description_type: abstract
  lang: eng

## Creator

- name: Ashutosh Kumar
  role: author
  orcid: https://orcid.org/0000-0002-8085-1598
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Martin Berg
  role: author
- name: Qin Wang
  role: author
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Michael Salter
  role: author
- name: Peter Ramvall
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: gallium nitride
  schema: not_defined
- subject: scanning transmission electron microscopy
  schema: not_defined
- subject: semiconductor
  schema: not_defined
- subject: activation
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: JOURNAL OF APPLIED PHYSICS
  issn: '00218979'
  volume: '134'
  issue: '3'
  article_number: '35701'

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: c1bc8708-dc5f-44be-a5b4-0415540402f2
  filename: Acceptor activation of Mg-doped GaN – Effects of N2-O2 vs N2 as ambient
    gas during annealing.pdf
  content_type: application/pdf
  size: 1087251
  md5: 288ea0979c7e8ccbbb77f61125d335e9

## Thumbnail

fileset_id: c1bc8708-dc5f-44be-a5b4-0415540402f2
filename: Acceptor activation of Mg-doped GaN – Effects of N2-O2 vs N2 as ambient
  gas during annealing.pdf