# Reversible Polarity Control in 2D MoTe<sub>2</sub> Field‐Effect Transistors for Complementary Logic Gate Applications

https://mdr.nims.go.jp/datasets/5eb9b27e-effb-4a6e-a337-d173d6665738

## File

- [Adv Funct Materials - 2024 - Yu - Reversible Polarity Control in 2D MoTe2 Field‐Effect Transistors for Complementary Logic.pdf](https://mdr.nims.go.jp/filesets/4f6d5441-450e-4ec8-8fec-ac7878dbb242/download) ([Detail](https://mdr.nims.go.jp/filesets/4f6d5441-450e-4ec8-8fec-ac7878dbb242.md))

## Id

5eb9b27e-effb-4a6e-a337-d173d6665738

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-13T08:19:37.750159Z

## Updated at

2025-02-14T03:31:34.866094Z

## Published at

2025-02-14T03:31:34.953439Z

## Doi



## First published url

https://doi.org/10.1002/adfm.202404129

## Date published

2024-05-15

## Recorded date published

2024-10

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Reversible Polarity Control in 2D MoTe<sub>2</sub> Field‐Effect Transistors
    for Complementary Logic Gate Applications
  title_type: original
  lang: en

## Description

- description: Precise control over polarity in field-effect transistors (FETs) plays
    a pivotal role in the design and construction of complementary metal–oxide–semiconductor
    (CMOS) logic circuits. In particular, achieving such precise polarity control
    in 2D semiconductors is crucial for the further development of advanced electronic
    applications beyond unit devices. This paper presents a systematic investigation
    on the reversible transition of carrier types in a 2D MoTe2 semiconductor under
    different annealing atmospheres. Photoemission spectroscopy and density functional
    theory (DFT) calculations demonstrate that annealing processes in vacuum and in
    ambient air induce a modification in the density of states, resulting in alterations
    in p-type or n-type characteristics. These reversible changes are attributed to
    the physisorption and elimination of oxygen on the surface of MoTe2. Furthermore,
    it is found that the device geometry affects the polarity of the transistor. By
    strategically manipulating both the annealing conditions and the geometric configuration,
    the n- and p-type unipolar characteristics of MoTe2 FETs are successfully modulated
    and ultimately demonstrating that the functionality of not only a complementary
    inverter with a high voltage gain of ≈20, but also more complex logic circuits
    of NAND and NOR gates.
  description_type: abstract
  lang: und

## Creator

- name: Byoung‐Soo Yu
  role: author
- name: Wonsik Kim
  role: author
- name: Jisu Jang
  role: author
- name: Je‐Jun Lee
  role: author
- name: Jung Pyo Hong
  role: author
- name: Namhee Kwon
  role: author
- name: Seunghwan Kim
  role: author
- name: Aelim Ha
  role: author
- name: Hong‐Kyu Kim
  role: author
- name: Jae‐Pyoung Ahn
  role: author
- name: Kwangsik Jeong
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Gunuk Wang
  role: author
- name: Jongtae Ahn
  role: author
- name: Soohyung Park
  role: author
- name: Do Kyung Hwang
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Polarity control
  schema: not_defined
- subject: field-effect transistors
  schema: not_defined
- subject: MoTe2
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Functional Materials
  issn: '16163028'
  volume: '34'
  issue: '41'
  article_number: '2404129'

## Conference



## Related item



## Funding

- identifier: 2E32942
  funder_name: Korea Institute of Science and Technology
- identifier: 2V09840‐23‐P024
  funder_name: Korea Institute of Science and Technology
- identifier: 2V09703
  funder_name: Korea Institute of Science and Technology
- identifier: 2023R1A2C2003985
  funder_name: National Research Foundation of Korea
- identifier: 2021M3H4A6A02050353
  funder_name: National Research Foundation of Korea
- identifier: 2022M3D1A2095315
  funder_name: National Research Foundation of Korea
- funder_name: Changwon National University

## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Computational method



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## Fileset

- id: 4f6d5441-450e-4ec8-8fec-ac7878dbb242
  filename: Adv Funct Materials - 2024 - Yu - Reversible Polarity Control in 2D MoTe2
    Field‐Effect Transistors for Complementary Logic.pdf
  content_type: application/pdf
  size: 4131321
  md5: fb62929fc77f9b545153c33cecf7863d

## Thumbnail

fileset_id: 4f6d5441-450e-4ec8-8fec-ac7878dbb242
filename: Adv Funct Materials - 2024 - Yu - Reversible Polarity Control in 2D MoTe2
  Field‐Effect Transistors for Complementary Logic.pdf