# MOCVD‐Grown MoS                    <sub>2</sub>                    Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

https://mdr.nims.go.jp/datasets/5eb498f5-9e46-434b-98e5-f85d34c12f22

## File

- [Advanced Materials - 2026 - Li - MOCVD‐Grown MoS2 Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface.pdf](https://mdr.nims.go.jp/filesets/9f100776-ab32-4af9-9e2f-3c832c39d858/download) ([Detail](https://mdr.nims.go.jp/filesets/9f100776-ab32-4af9-9e2f-3c832c39d858.md))
- [adma73931-sup-0001-suppmat.pdf](https://mdr.nims.go.jp/filesets/88e7ce67-2bb2-44f0-90f9-f38b7b64ea76/download) ([Detail](https://mdr.nims.go.jp/filesets/88e7ce67-2bb2-44f0-90f9-f38b7b64ea76.md))

## Id

5eb498f5-9e46-434b-98e5-f85d34c12f22

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-28T23:35:41.092158Z

## Updated at

2026-07-29T00:15:47.288035Z

## Published at

2026-07-29T01:28:02.509767Z

## Doi



## First published url

https://doi.org/10.1002/adma.73931

## Date published

2026-07-05

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: |-
    MOCVD‐Grown MoS
                        <sub>2</sub>
                        Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering
  title_type: original
  lang: en

## Description

- description: We uncover the electronic origin of hidden interfacial doping in monolayer
    MoS2 single　crystal wafers grown on sapphire by metal–organic chemical vapor deposition
    (MOCVD) and establish a transfer-free top-gate device platform. Despite structural
    perfection, as-fabricated devices exhibit degenerate electron doping and lack
    a clear off state. Hall measurements quantify an interfacial electron density
    of 2.7×1012 cm−2, evidencing substantial charge transfer across the nominal van
    der Waals interface. Interface-sensitive spectroscopy, lateral force microscopy,
    and thermal desorption analysis reveal a buried sulfate-derived layer accompanied
    by a water-like interfacial structure that acts as an intrinsic electron donor.
    A purely dry H2/Ar annealing process selectively removes these species, suppressing
    charge transfer and restoring intrinsic FET characteristics without transfer or
    wet processing. Through this dry interface engineering approach, we demonstrate
    MOCVD-grown single-crystal MoS2 wafers as a robust, transfer-free platform for
    the reliable evaluation of intrinsic gate stacks and device performance.
  description_type: abstract
  lang: und

## Creator

- name: Shuhong Li
  role: author
- name: Juiteng Chang
  role: author
- name: Keisuke Atsumi
  role: author
- name: Kosei Matsumoto
  role: author
- name: Itsuki Tanaka
  role: author
- name: Tomonori Nishimura
  role: author
- name: Kaito Kanahashi
  role: author
- name: Takahiro Nagata
  role: author
  orcid: https://orcid.org/0000-0002-8591-2943
- name: Jun Nara
  role: author
- name: Yoshiki Sakuma
  role: author
- name: Emi Kano
  role: author
- name: Nobuyuki Ikarashi
  role: author
- name: Kosuke Nagashio
  role: author
  orcid: https://orcid.org/0000-0003-1181-8644

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: MOCVD-grownMoS2wafers
  schema: not_defined
- subject: interfacialchargetransfer
  schema: not_defined
- subject: transfer-freedevicefabrication
  schema: not_defined
- subject: top-gatefield-effecttransistors
  schema: not_defined
- subject: wafer-scale2Dsemiconductors
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Advanced Materials
  issn: '09359648'
  article_number: e73931

## Conference



## Related item



## Funding

- identifier: JPMJCR24A3
  funder_name: JST
  description: 'CREST: funding program for team-oriented research with the aim of
    achieving the strategic goals set forth by the government.'
- identifier: JPMJES2531
  funder_name: JST
  description: JST-Research and Devel-opment Programfor Next-generation Edge AI Semiconductors
- identifier: JPMJMI22708192
  funder_name: JST
  description: 'JST-Mirai:  funding program for high-risk but high-return R&D that
    leads to social and economic impact.'

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 9f100776-ab32-4af9-9e2f-3c832c39d858
  filename: Advanced Materials - 2026 - Li - MOCVD‐Grown MoS2 Wafers as a Transfer‐Free
    Platform for Top‐Gate Devices via Dry Interface.pdf
  content_type: application/pdf
  size: 2825321
  md5: 99fd39819129a7c9c4629155b280ec44
- id: 88e7ce67-2bb2-44f0-90f9-f38b7b64ea76
  filename: adma73931-sup-0001-suppmat.pdf
  content_type: application/pdf
  size: 4443599
  md5: 70f0e4f3c9245d08bdfd22a5aaeb2fcc

## Thumbnail

fileset_id: 88e7ce67-2bb2-44f0-90f9-f38b7b64ea76
filename: adma73931-sup-0001-suppmat.pdf