# Optimizing thermal energy harvesting in few-layer MoS2 with measurements of electron's effective mass in two-dimensional semiconductors

https://mdr.nims.go.jp/datasets/5e6b3715-c4d2-487e-ab8e-1d8abfe19373

## File

- [MDR専用.pdf](https://mdr.nims.go.jp/filesets/ffff6b4d-ac62-4960-abb7-ea1218cceb92/download) ([Detail](https://mdr.nims.go.jp/filesets/ffff6b4d-ac62-4960-abb7-ea1218cceb92.md))

## Id

5e6b3715-c4d2-487e-ab8e-1d8abfe19373

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-01-14T01:08:24.961639Z

## Updated at

2026-01-14T01:42:17.066112Z

## Published at

2026-01-14T03:20:08.464914Z

## Doi

https://doi.org/10.48505/nims.6121

## First published url

https://doi.org/10.1063/5.0291091

## Date published

2026-03-01

## Recorded date published

2026-3-1

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Optimizing thermal energy harvesting in few-layer MoS2 with measurements
    of electron's effective mass in two-dimensional semiconductors
  title_type: original
  lang: en

## Description

- description: "Two-dimensional transition metal dichalcogenides (2D TMDs) have emerged
    as promising candidates for next-generation electronic devices in the post-Moore’s
    Law era. However, the high-power densities of these devices lead to substantial
    heat generation, highlighting the importance of thermoelectric generators for
    waste heat recovery. Among 2D TMDs, ultrathin MoS2 has shown considerable potential
    for applications in both nanoscale transistors and thermoelectric generators.
    Nevertheless, the correlation between its electrical transport and thermoelectric
    properties remains insufficiently understood and warrants further investigation.
    To address this, we fabricated thermoelectric field-effect transistors using MoS2
    flakes (1 to 39 layers). We measured electrical and thermoelectric properties
    from 80 K to 600 K, analyzing transport behaviors using Mott's \thopping transport,
    thermal activation, and phonon scattering theories. We especially studied their
    dependence on the carriers’ concentration. This analysis allowed us to extract
    the universal Boltzmann constant k_B and the electron’s effective mass m^*. Our
    findings indicate that thermoelectric performances achieve the optimum state for
    MoS2 flakes with thicknesses less than 20 layers, where the high-voltage output
    and maximum energy conversion efficiency occur at 15–20 and 1-5 layers, respectively.
    Notably, we present the electron's effective mass as a function of flake thickness.
    We identified an extrinsic effect of memory steps, caused by trapped charge release
    above 450 K, which significantly enhances electrical and thermoelectric properties."
  description_type: abstract
  lang: und

## Creator

- name: Kuan-Cheng Lu
  role: author
  orcid: https://orcid.org/0009-0003-5351-9949
- name: Chetan Awasthi
  role: author
  orcid: https://orcid.org/0000-0002-6027-5095
- name: Ta-Wei Chiu
  role: author
- name: S. S. Islam
  role: author
  orcid: https://orcid.org/0000-0001-7696-5499
- name: Kimitoshi Kono
  role: author
  orcid: https://orcid.org/0000-0002-4446-4419
- name: Kazuhito Tsukagoshi
  role: author
  orcid: https://orcid.org/0000-0001-9710-2692
- name: Wen-Bin Jian
  role: author
  orcid: https://orcid.org/0000-0002-1898-9641

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: Two-Dimensional Semiconductors
  schema: not_defined
- subject: Seebeck Coefficient
  schema: not_defined
- subject: MoS2
  schema: not_defined
- subject: Mott’s Hopping Transport
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Kuan-Cheng Lu, Chetan Awasthi, Ta-Wei Chiu, S. S. Islam, Kimitoshi Kono, Kazuhito
    Tsukagoshi, Wen-Bin Jian; Optimizing thermal energy harvesting in few-layer MoS2
    with measurements of electron''s effective mass in two-dimensional semiconductors.
    Appl. Phys. Rev. 1 March 2026; 13 (1): 011408 and may be found at https://doi.org/10.1063/5.0291091.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Reviews
  issn: '19319401'
  volume: '13'
  issue: '1'
  article_number: '011408'

## Conference



## Related item



## Funding

- identifier: NSTC-113-2124-M-A49-001-
  funder_name: National Science and Technology Council
- identifier: NSTC- 113-2112-M-A49-026-
  funder_name: National Science and Technology Council
- identifier: NSTC 114-2634-F-A49-001-
  funder_name: National Science and Technology Council

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## Fileset

- id: ffff6b4d-ac62-4960-abb7-ea1218cceb92
  filename: MDR専用.pdf
  content_type: application/pdf
  size: 1762214
  md5: 7f1b4fd9e313254dcabbae836fb2550b

## Thumbnail

fileset_id: ffff6b4d-ac62-4960-abb7-ea1218cceb92
filename: MDR専用.pdf