# Dirac-source diode with sub-unity ideality factor

https://mdr.nims.go.jp/datasets/5b854649-daa4-4646-bab1-3f8311787bf1

## File

- [s41467-022-31849-5.pdf](https://mdr.nims.go.jp/filesets/cf439697-0778-4154-a389-5b16d8a8e840/download) ([Detail](https://mdr.nims.go.jp/filesets/cf439697-0778-4154-a389-5b16d8a8e840.md))

## Id

5b854649-daa4-4646-bab1-3f8311787bf1

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-26T08:33:52.901775Z

## Updated at

2025-02-27T07:30:58.036967Z

## Published at

2025-02-27T07:30:58.120541Z

## Doi



## First published url

https://doi.org/10.1038/s41467-022-31849-5

## Date published

2022-07-26

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Dirac-source diode with sub-unity ideality factor
  title_type: original
  lang: en

## Description

- description: An increase in power consumption necessitates a low-power circuit technology
    to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors
    (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source
    field-effect transistors (DS-FETs), have been realised to break the thermionic
    limit of the subthreshold swing (SS). However, a low-power diode rectifier, which
    breaks the thermionic limit of an ideality factor (η) of 1 at room temperature,
    has not been proposed yet. In this study, we have realised a DS Schottky triode,
    which exhibits a steep-slope characteristic curve, by utilising the linear density
    of states (DOSs) of graphene. For the developed DS Schottky triode, η < 1 for
    more than two decades of drain current with a minimum value of 0.8, and the rectifying
    ratio is large (> 100000). The realisation of a DS Schottky triode paves the way
    for the development of low-power electronic circuits.
  description_type: abstract
  lang: und

## Creator

- name: Gyuho Myeong
  role: author
- name: Wongil Shin
  role: author
- name: Kyunghwan Sung
  role: author
- name: Seungho Kim
  role: author
- name: Hongsik Lim
  role: author
- name: Boram Kim
  role: author
- name: Taehyeok Jin
  role: author
- name: Jihoon Park
  role: author
- name: Taehun Lee
  role: author
- name: Michael S. Fuhrer
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Fei Liu
  role: author
- name: Sungjae Cho
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Low-power transistors
  schema: not_defined
- subject: Dirac-source diode
  schema: not_defined
- subject: steep-slope characteristic
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Nature Communications
  issn: '20411723'
  volume: '13'
  issue: '1'
  article_number: '4328'

## Conference



## Related item



## Funding

- identifier: 2020R1A2C2100258
  funder_name: National Research Foundation of Korea
- identifier: 2019M3F3A1A03079760
  funder_name: National Research Foundation of Korea
- identifier: 2020M3F3A2A01081899
  funder_name: National Research Foundation of Korea

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: cf439697-0778-4154-a389-5b16d8a8e840
  filename: s41467-022-31849-5.pdf
  content_type: application/pdf
  size: 1057529
  md5: 03f6ec8432982b7f0450dcfb7875a1c6

## Thumbnail

fileset_id: cf439697-0778-4154-a389-5b16d8a8e840
filename: s41467-022-31849-5.pdf