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An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (η) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS Schottky triode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene. For the developed DS Schottky triode, η < 1 for more than two decades of drain current with a minimum value of 0.8, and the rectifying ratio is large (> 100000). The realisation of a DS Schottky triode paves the way for the development of low-power electronic circuits.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Low-power transistors, Dirac-source diode, steep-slope characteristic

刊行年月日: 2022-07-26

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 13 issue. 1 4328

研究助成金:

• National Research Foundation of Korea 2020R1A2C2100258
• National Research Foundation of Korea 2019M3F3A1A03079760
• National Research Foundation of Korea 2020M3F3A2A01081899

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-022-31849-5

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更新時刻: 2025-02-27 16:30:58 +0900

MDRでの公開時刻: 2025-02-27 16:30:58 +0900