# Magnetization Vector Rotation Reservoir Computing Operated by Redox Mechanism

https://mdr.nims.go.jp/datasets/5b72fb7a-3642-4144-8a38-1b1b4cf6bc4f

## File

- [20230724_manuscript_Namiki et al_submittedver.pdf](https://mdr.nims.go.jp/filesets/4a1ee43d-cf74-4647-9efc-3353b6e83bff/download) ([Detail](https://mdr.nims.go.jp/filesets/4a1ee43d-cf74-4647-9efc-3353b6e83bff.md))

## Id

5b72fb7a-3642-4144-8a38-1b1b4cf6bc4f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-08-02T16:24:23.461002Z

## Updated at

2024-08-05T03:30:30.977370Z

## Published at

2024-08-05T03:30:31.063155Z

## Doi

https://doi.org/10.48505/nims.4620

## First published url

https://doi.org/10.1021/acs.nanolett.3c05029

## Date published

2024-04-17

## Recorded date published

2024-4-17

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Magnetization Vector Rotation Reservoir Computing Operated by Redox Mechanism
  title_type: original
  lang: en

## Description

- description: Physical reservoir computing is a promising way to develop an efficient
    artificial intelligence using physical devices exhibiting nonlinear dynamics.
    Although magnetic materials have advantages in miniaturization, the need for a
    magnetic field and large electric current result in high electric power consumption
    and a complex device structure. To resolve these issues, we propose a redox-based
    physical reservoir utilizing the planar Hall effect and anisotropic magnetoresistance,
    which are phenomena described by different nonlinear functions of the magnetization
    vector, that does not need a magnetic field to be applied. The expressive power
    of this reservoir based on a compact all-solid-state redox transistor is higher
    than previous physical reservoir. The normalized mean square error of the reservoir
    on a second-order nonlinear equation task was 1.69&times;10-3, which is lower
    than that of a memristor array (3.13&times;10-3) even though the number of reservoir
    nodes was fewer than half that of the memristor array.
  description_type: abstract
  lang: und

## Creator

- name: Wataru Namiki
  role: author
  orcid: https://orcid.org/0000-0003-4053-7366
  organization: National Institute for Materials Science
- name: Daiki Nishioka
  role: author
  orcid: https://orcid.org/0000-0002-3369-7700
  organization: National Institute for Materials Science
- name: Takashi Tsuchiya
  role: author
  orcid: https://orcid.org/0000-0002-6950-6160
  organization: National Institute for Materials Science
- name: Tohru Higuchi
  role: author
- name: Kazuya Terabe
  role: author
  orcid: https://orcid.org/0000-0003-3988-3456
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Reservoir computing
  schema: not_defined
- subject: Magnetic property tuning
  schema: not_defined
- subject: Planar Hall effect
  schema: not_defined
- subject: Redox
  schema: not_defined
- subject: Solid-state electrolyte
  schema: not_defined
- subject: Lithium ion
  schema: not_defined

## Rights

- description: This document is the unedited Author’s version of a Submitted Work
    that was subsequently accepted for publication in Nano Letters, copyright © 2024
    American Chemical Society after peer review. To access the final edited and published
    work see https://doi.org/10.1021/acs.nanolett.3c05029
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Nano Letters
  issn: '15306984'
  volume: '24'
  issue: '15'
  start_page: 4383
  end_page: 4392

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## Related item



## Funding

- identifier: JPMJPR23H4
  funder_name: Precursory Research for Embryonic Science and Technology
- identifier: JP21J21982
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22H04625
  funder_name: Japan Society for the Promotion of Science
- funder_name: National Institute for Materials Science
- funder_name: Yazaki Memorial Foundation for Science and Technology
- funder_name: Iketani Science and Technology Foundation

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## Fileset

- id: 4a1ee43d-cf74-4647-9efc-3353b6e83bff
  filename: 20230724_manuscript_Namiki et al_submittedver.pdf
  content_type: application/pdf
  size: 2499426
  md5: ef98ac155814980b0604de3e4e820eed

## Thumbnail

fileset_id: 4a1ee43d-cf74-4647-9efc-3353b6e83bff
filename: 20230724_manuscript_Namiki et al_submittedver.pdf