# Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors

https://mdr.nims.go.jp/datasets/5b28de28-4596-49be-8b93-6373cabd34ce

## Files

- [manuscript.pdf](https://mdr.nims.go.jp/filesets/52f97cb4-a92d-4a87-8a34-4fa34e930e8b/download) ([Detail](https://mdr.nims.go.jp/filesets/52f97cb4-a92d-4a87-8a34-4fa34e930e8b.md))

## Id

5b28de28-4596-49be-8b93-6373cabd34ce

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-10-29T04:49:29.699863Z

## Updated at

2025-10-31T03:30:17.983989Z

## Published at

2025-10-31T03:24:36.105163Z

## Doi

https://doi.org/10.48505/nims.5848

## First published url

https://doi.org/10.1080/26941112.2025.2551496

## Date published

2025-12-31

## Recorded date published

2025-12-31

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor
    field-effect transistors
  title_type: original
  lang: en

## Description

- description: Extensive research has been conducted on wide-bandgap semiconductor
    diamond for the advancement of high-power, high-frequency, and high-temperature
    electronic devices. The author has established long-term collaboration with Prof.
    Koide, focusing on producing p-type hydrogen-terminated diamond (H-diamond) and
    boron-doped oxygen-terminated diamond (O-diamond) based metal-oxide-semiconductor
    field-effect transistors (MOSFETs). This paper presents our primary research findings
    on the fabrication of enhancement-mode H-diamond MOSFETs and MOSFET logic circuits,
    as well as the high-temperature operation of the boron-doped O-diamond MOSFETs.
  description_type: abstract
  lang: und

## Creator

- name: Jiangwei Liu
  role: author
  orcid: https://orcid.org/0000-0003-2580-7401

## Contact agent



## Publisher

organization: Informa UK Limited

## Managing organization



## Keyword

- subject: diamond
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

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## Data origin



## Embargo



## Journal

- title: Functional Diamond
  issn: '26941112'
  volume: '5'
  issue: '1'
  article_number: '2551496'

## Conference



## Related item



## Funding

- identifier: JP23K03966
  funder_name: Japan Society for the Promotion of Science
- identifier: ARIM (23WS0311 and 23NM5006)
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: W911NF‐223‐1‐0267
  funder_name: U.S. Army Research Office, under the direction
- funder_name: Lynn J. Petersen

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



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## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 52f97cb4-a92d-4a87-8a34-4fa34e930e8b
  filename: manuscript.pdf
  content_type: application/pdf
  size: 1873104
  md5: 4a11e8f83880b5233b63314e7fbf1ece

## Thumbnail

fileset_id: 52f97cb4-a92d-4a87-8a34-4fa34e930e8b
filename: manuscript.pdf