# [Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K

https://mdr.nims.go.jp/datasets/5b1ddd9b-490a-4b12-9a85-e5ae9b68d980

## File

- [[Vol. 68]New GaN MEMS Resonator Is Temperature-Stable up to 600 K_ WPI-MANA.pdf](https://mdr.nims.go.jp/filesets/aa08b5cf-c348-4e90-904a-f37399c27863/download) ([Detail](https://mdr.nims.go.jp/filesets/aa08b5cf-c348-4e90-904a-f37399c27863.md))

## Id

5b1ddd9b-490a-4b12-9a85-e5ae9b68d980

## Local identifier

identifier: research-highlights/00068

## Visibility

open_to_public

## State

published

## Created at

2022-06-25T13:59:26.271857Z

## Updated at

2023-12-26T12:38:08.584498Z

## Published at

2022-12-16T04:35:01.090998Z

## Doi

https://doi.org/10.48505/nims.3808

## First published url

https://www.nims.go.jp/mana/research/highlights/vol68.html

## Date published

2021-07-13

## Recorded date published

2021-07-13

## Resource type

magazine

## Manuscript type

vor

## Collection

- id: e1c8d7be-5bbc-4156-96cf-4c0efce6b473
  identifier: https://mdr.nims.go.jp/pid/e1c8d7be-5bbc-4156-96cf-4c0efce6b473
  title: Research Highlights

## Title

- title: "[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable
    up to 600 K"
  title_type: original
  lang: en

## Description

- description: A team at MANA has demonstrated a highly temperature-stable GaN resonator
    that boasts high-frequency stability, high Q factor and the potential for large-scale
    integration with silicon technology.
  description_type: abstract
  lang: en

## Creator

- name: International Center for Materials Nanoarchitectonics (WPI-MANA)
  role: author
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: National Institute for Materials Science
ror: https://ror.org/026v1ze26

## Managing organization



## Keyword

- subject: GaN
  schema: not_defined
- subject: MEMS
  schema: not_defined
- subject: NEMS
  schema: not_defined
- subject: energy storage
  schema: not_defined
- subject: temperature coefficient of frequency
  schema: not_defined
- subject: AlN
  schema: not_defined
- subject: Si
  schema: not_defined
- subject: Strain
  schema: not_defined

## Rights

- description: In Copyright
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: MANA E-BULLETIN
  volume: '68'

## Conference



## Related item

- identifier: https://doi.org/10.1109/IEDM13553.2020.9372065
  identifier_type: DOI
  relation_type: refers
  related_item_type: dataset

## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: aa08b5cf-c348-4e90-904a-f37399c27863
  filename: "[Vol. 68]New GaN MEMS Resonator Is Temperature-Stable up to 600 K_ WPI-MANA.pdf"
  content_type: application/pdf
  size: 171307
  md5: 42c6ec30118793ecb678b153204f7c08

## Thumbnail

fileset_id: aa08b5cf-c348-4e90-904a-f37399c27863
filename: "[Vol. 68]New GaN MEMS Resonator Is Temperature-Stable up to 600 K_ WPI-MANA.pdf"