Rajesh Deb
;
Samapika Mallik
;
Yamineekanta Mishra
;
Roshan Padhan
;
Satyaprakash Sahoo
;
Kazuya Terabe
;
Tohru Tsuruoka
;
Saumya R. Mohapatra
説明:
(abstract)This study introduces a memristor device, made up of a well-known MIEC cuprous iodide (CuI), for artificial synaptic applications. A cross-point structured Cu/CuI/Pt device initially shows digital bipolar RS under bias voltage sweeping, which is characterized by well-separated SET and RESET voltages with a high ON/OFF resistance ratio of ~105. After 100 bias sweeping cycles, the device completely changes, showing analog RS behavior without any well-defined SET and RESET voltage, and exhibits a continuous current trajectory under bias sweeps. In comparison to the digital RS mode, the analog RS mode exhibits minimal cycle-to-cycle variability with a reduced ON/OFF ratio of ~10. The current conduction mechanism underlying digital switching behavior is ascribed to the formation and dissolution of a Cu filament. The analog RS behavior arises from charge trapping/detrapping at defect sites created during digital RS cycles. The device showing analog RS exhibits long-term and short-term plasticity, similar to biological synapses under voltage pulse applications. Utilizing the long-term plasticity data, artificial neural network simulations demonstrate an image recognition accuracy of ~93% for handwritten digits. Furthermore, the device successfully replicates paired-pulse facilitation/depression and spike timing-dependent plasticity.
権利情報:
キーワード: analog memristor, mixed ionic-electronic conductor, cuprous iodide, artificial synapse, artificial neural network
刊行年月日: 2025-05-27
出版者: American Chemical Society (ACS)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1021/acsaelm.5c00529
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-05-31 08:30:25 +0900
MDRでの公開時刻: 2025-05-31 08:22:50 +0900
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2025_ACSAEM7_4616.pdf
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サイズ | 7.42MB | 詳細 |