# Characterization of Interface States in CVD Monolayer MoS                    <sub>2</sub>                    /Al                    <sub>2</sub>                    O                    <sub>3</sub>                    MOS Capacitors via the Conductance Method

https://mdr.nims.go.jp/datasets/59fcb671-8802-453d-a2e5-480a9eab4c96

## File

- [final.pdf](https://mdr.nims.go.jp/filesets/f257ebe0-db76-41a4-ac13-59bb3c32b9d6/download) ([Detail](https://mdr.nims.go.jp/filesets/f257ebe0-db76-41a4-ac13-59bb3c32b9d6.md))

## Id

59fcb671-8802-453d-a2e5-480a9eab4c96

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-10-20T07:07:47.464012Z

## Updated at

2026-10-20T23:30:20.783354Z

## Published at

2026-10-20T09:29:39.852125Z

## Doi

https://doi.org/10.48505/nims.8672

## First published url

https://doi.org/10.1109/led.2026.3708092

## Date published

2026-07-03

## Recorded date published



## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Characterization of Interface States in CVD Monolayer MoS                    <sub>2</sub>                    /Al                    <sub>2</sub>                    O                    <sub>3</sub>                    MOS
    Capacitors via the Conductance Method
  title_type: original
  lang: en

## Description

- description: MoS2 is one of the transition metal dichalcogenides that has been extensively
    studied as a next-generation semiconductor material due to its high carrier mobility
    in the monolayer limit. However, the atomically thin nature of MoS2 poses challenges
    for capacitance characteristics measurements by metal-oxide-semiconductor (MOS)
    capacitors, leading to limited research on the characteristics of their interfaces.
    In this study, we fabricated MOS capacitors with different device areas using
    a monolayer MoS2 synthesized by chemical vapor deposition and a high-k dielectric,
    Al2O3 insulator deposited by atomic layer deposition and performed the capacitance
    measurement. We found that increasing the area of the devices led to more significant
    frequency-dispersion due to increased channel resistance within the MoS2. Importantly,
    we propose for the first time the use of the ring-shaped capacitor conductance
    method to extract interface trap densities on the order of 1012 eV-1 cm-2 from
    devices with different areas, indicating that under the present measurement conditions,
    series and channel resistances do not significantly affect the extraction of interface
    trap density. Our results provide valuable insights into the interface properties
    of MOS structures incorporating monolayer MoS2, which are essential for advancing
    the development of two-dimensional semiconductor devices.
  description_type: abstract
  lang: und

## Creator

- name: Shiho Nakamura
  role: author
  orcid: https://orcid.org/0009-0005-6326-7786
- name: Zaoyang Lin
  role: author
- name: Daiki Tsuruoka
  role: author
- name: Takahiko Endo
  role: author
- name: Xiao Yu
  role: author
  orcid: https://orcid.org/0000-0001-8769-521X
- name: Tsung-En Lee
  role: author
  orcid: https://orcid.org/0000-0003-1881-3539
- name: Yasumitsu Miyata
  role: author
  orcid: https://orcid.org/0000-0002-9733-5119
- name: Nobuyuki Aoki
  role: author
- name: Mengnan Ke
  role: author
  orcid: https://orcid.org/0000-0001-8235-9559

## Contact agent



## Publisher

organization: Institute of Electrical and Electronics Engineers (IEEE)

## Managing organization



## Keyword

- subject: MoS2 MOS Capacitors
  schema: not_defined

## Rights

- description: "© 2026 IEEE.  Personal use of this material is permitted.  Permission
    from IEEE must be obtained for all other uses, in any current or future media,
    including reprinting/republishing this material for advertising or promotional
    purposes, creating new collective works, for resale or redistribution to servers
    or lists, or reuse of any copyrighted component of this work in other works.\r\n"
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: IEEE Electron Device Letters
  issn: '07413106'
  volume: '47'
  issue: '9'
  start_page: 1720
  end_page: 1723

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## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: f257ebe0-db76-41a4-ac13-59bb3c32b9d6
  filename: final.pdf
  content_type: application/pdf
  size: 1488018
  md5: 853a22a4c3c7a01a5760e76fb31dc255

## Thumbnail

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filename: final.pdf