# Multilevel Resonant Tunneling through Purely Organic Radical Molecules in a Si-Based Double-Tunnel Junction

https://mdr.nims.go.jp/datasets/5947bab1-ed68-42e4-83af-094edcb75104

## File

- [bera-et-al-2025-multilevel-resonant_without_ACS_marks.pdf](https://mdr.nims.go.jp/filesets/826a52bb-364b-40b4-a078-beab8afe6da4/download) ([Detail](https://mdr.nims.go.jp/filesets/826a52bb-364b-40b4-a078-beab8afe6da4.md))

## Id

5947bab1-ed68-42e4-83af-094edcb75104

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-10-20T10:06:12.838470Z

## Updated at

2026-02-14T11:53:14.582023Z

## Published at

2026-04-05T23:25:14.309368Z

## Doi

https://doi.org/10.48505/nims.5821

## First published url

https://doi.org/10.1021/acsami.5c00839

## Date published

2025-04-16

## Recorded date published

2025-4-16

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Multilevel Resonant Tunneling through Purely Organic Radical Molecules in
    a Si-Based Double-Tunnel Junction
  title_type: original
  lang: en

## Description

- description: The use of purely organic radicals is promising especially for future
    applications in molecular spintronics. However, the techniques used to form their
    molecular junctions, including break-junction and scanning tunneling microscopy
    techniques, are unsuitable for the integration of molecular devices in a large-scale
    setting. In this study, a Si-based double-tunnel junction with purely organic
    radicals, where adamantyl nitronyl nitroxide p-terphenyl (NN-TP) molecules are
    embedded as quantum dots in the oxide layer of a metal–oxide–semiconductor (MOS)
    structure, was demonstrated. Notably, this MOS structure functions as a tunnel
    junction, which has a high affinity for the current Si technology. In this study,
    multilevel resonant tunneling through the discrete energy levels of the NN-TP
    molecules at 7 K was achieved; moreover, the tunneling current was observed at
    100 K. Furthermore, our device exhibited resonant tunneling through a singly occupied
    molecular orbital, indicating the survival of an unpaired electron in the radical
    molecules. Thus, our findings hold promise for incorporating the attractive functions
    of organic radicals into Si-based solid-state devices and thereby enabling the
    large-scale integration of molecular devices.
  description_type: abstract
  lang: und

## Creator

- name: Jayanta Bera
  role: author
  orcid: https://orcid.org/0000-0002-4206-8113
  organization: National Institute for Materials Science
- name: Mikhail Kabdulov
  role: author
- name: Yutaka Wakayama
  role: author
  orcid: https://orcid.org/0000-0002-0801-8884
  organization: National Institute for Materials Science
- name: Thomas Huhn
  role: author
- name: Ryoma Hayakawa
  role: author
  orcid: https://orcid.org/0000-0002-1442-8230
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: organic radicals
  schema: not_defined
- subject: " resonant tunneling"
  schema: not_defined
- subject: molecular orbitals
  schema: not_defined
- subject: double-tunnel junctions
  schema: not_defined
- subject: unpaired electron
  schema: not_defined
- subject: quantum transport
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in ACS Applied Materials & Interfaces, copyright ©
    2025 American Chemical Society after peer review and technical editing by the
    publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.5c00839
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-04-06
end_date: 2026-04-07

## Journal

- title: ACS Applied Materials & Interfaces
  issn: '19448244'
  volume: '17'
  issue: '15'
  start_page: 23018
  end_page: 23024

## Conference



## Related item



## Funding

- identifier: 23K22802
  funder_name: Japan Society for the Promotion of Science
- identifier: 24KF0270
  funder_name: Japan Society for the Promotion of Science
- funder_name: National Institute for Materials Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 826a52bb-364b-40b4-a078-beab8afe6da4
  filename: bera-et-al-2025-multilevel-resonant_without_ACS_marks.pdf
  content_type: application/pdf
  size: 613482
  md5: efe82427219ca1bebd6e18b06c1ba8fc

## Thumbnail

fileset_id: 826a52bb-364b-40b4-a078-beab8afe6da4
filename: bera-et-al-2025-multilevel-resonant_without_ACS_marks.pdf