# Electronic Poiseuille flow in hexagonal boron nitride encapsulated graphene field effect transistors

https://mdr.nims.go.jp/datasets/59387634-9f26-4172-b3cf-e34c1d1d1761

## File

- [PhysRevResearch.5.023075.pdf](https://mdr.nims.go.jp/filesets/12997a05-ffc8-4ec1-b971-60369e8165fa/download) ([Detail](https://mdr.nims.go.jp/filesets/12997a05-ffc8-4ec1-b971-60369e8165fa.md))

## Id

59387634-9f26-4172-b3cf-e34c1d1d1761

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-18T02:50:27.105487Z

## Updated at

2025-02-23T13:47:11.998084Z

## Published at

2025-02-23T13:47:12.077375Z

## Doi



## First published url

https://doi.org/10.1103/physrevresearch.5.023075

## Date published

2023-05-01

## Recorded date published

2023-5

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Electronic Poiseuille flow in hexagonal boron nitride encapsulated graphene
    field effect transistors
  title_type: original
  lang: en

## Description

- description: Electron-electron interactions in graphene are sufficiently strong
    to induce a correlated and momentum-conserving flow such that charge carriers
    behave similarly to the Hagen-Poiseuille flow of a classical fluid. In the current
    work, we investigate the electronic signatures of such a viscous charge flow in
    high-mobility graphene FETs. In two complementary measurement schemes, we monitor
    differential resistance of graphene for different channel widths and for different
    effective electron temperatures. By combining both approaches, the presence of
    viscous effects is verified in a temperature range starting from 178 K and extending
    up to room temperature. Our experimental findings are supported by finite element
    calculations of the graphene channel, which also provide design guidelines for
    device geometries that exhibit increased viscous effects. The presence of vis-
    cous effects near room temperature opens up avenues for functional hydrodynamic
    devices such as geometric rectifiers like a Tesla valve and charge amplifiers
    based on electronic Venturi effect.
  description_type: abstract
  lang: und

## Creator

- name: Wenhao Huang
  role: author
- name: Tathagata Paul
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Mickael L. Perrin
  role: author
- name: Michel Calame
  role: author

## Contact agent



## Publisher

organization: American Physical Society (APS)

## Managing organization



## Keyword

- subject: Electron-electron interactions
  schema: not_defined
- subject: graphene
  schema: not_defined
- subject: viscous charge flow
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

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## Journal

- title: Physical Review Research
  issn: '26431564'
  volume: '5'
  issue: '2'
  article_number: '023075'

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## Funding

- identifier: '189924'
  funder_name: Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen
    Forschung
- identifier: '196795'
  funder_name: Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen
    Forschung
- identifier: 19H05790
  funder_name: Japan Society for the Promotion of Science
- identifier: 20H00354
  funder_name: Japan Society for the Promotion of Science
- identifier: MB22.00076
  funder_name: Scientific Education and Research Institute

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## Fileset

- id: 12997a05-ffc8-4ec1-b971-60369e8165fa
  filename: PhysRevResearch.5.023075.pdf
  content_type: application/pdf
  size: 1249500
  md5: 41988c7a36d7a777543f069dde4b75e7

## Thumbnail

fileset_id: 12997a05-ffc8-4ec1-b971-60369e8165fa
filename: PhysRevResearch.5.023075.pdf