# Dual-Step Chemical Treatment of Wafer-Scale Metal–Organic Chemical Vapor Deposition Grown Monolayer Molybdenum Disulfides

https://mdr.nims.go.jp/datasets/580ea4e1-98f3-4e2f-ac5d-340aafb0de7a

## File

- [lim-et-al-2025-dual-step-chemical-treatment-of-wafer-scale-metal-organic-chemical-vapor-deposition-grown-monolayer.pdf](https://mdr.nims.go.jp/filesets/4bd4b094-879d-4214-8717-8a8594b8cb48/download) ([Detail](https://mdr.nims.go.jp/filesets/4bd4b094-879d-4214-8717-8a8594b8cb48.md))

## Id

580ea4e1-98f3-4e2f-ac5d-340aafb0de7a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-14T11:58:15.647717Z

## Updated at

2026-02-16T23:30:32.244967Z

## Published at

2026-02-16T09:00:50.444920Z

## Doi



## First published url

https://doi.org/10.1021/acsnano.5c08927

## Date published

2025-10-07

## Recorded date published

2025-10-7

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Dual-Step Chemical Treatment of Wafer-Scale Metal–Organic Chemical Vapor
    Deposition Grown Monolayer Molybdenum Disulfides
  title_type: original
  lang: en

## Description

- description: Two-dimensional (2D) transition metal dichalcogenides (TMDs) possess
    remarkable optical and electronic properties, making them a promising candidate
    for optoelectronic applications. Recently, major advances in the wafer-scale growth
    of TMDs using the Metal-Organic Chemical Vapor Deposition (MOCVD) have enabled
    their integration with standard electronics. However, such materials continue
    to suffer from defects and unwanted doping, which lower semiconductor performance,
    as exemplified by poor photoluminescence (PL) yield. Chemical treatment protocols
    have been shown to improve PL yield in exfoliated and CVD-grown materials. Here,
    using optical and Raman microscopy, X-ray Photoemission Spectroscopy (XPS) and
    Density Functional Theory (DFT) calculations, we develop chemical treatment protocols
    for wafter-scale MOCVD-grown monolayer MoS2. The post-growth treatment use sulfide
    and TFSI- based ionic salts delivered via a solution process. We demonstrate a
    substantial PL enhancement ranging from 23 to 50 times, depending on the underlying
    MOCVD growth method of the MoS2. We present design rules for tuning chemical treatment
    protocols, depending on the defect densities and doping levels, allowing for successful
    passivation and large PL enhancements, across different growth conditions. Our
    results demonstrate the versatility of these chemical treatment protocols and
    their potential to improve PL in device-relevant wafer-scale MOCVD-grown monolayer
    TMDs.
  description_type: abstract
  lang: und

## Creator

- name: Juhwan Lim
  role: author
- name: Anh Tuấn Hoàng
  role: author
- name: Zhaojun Li
  role: author
- name: Tran Thi Ngoc Van
  role: author
- name: Jung-In Lee
  role: author
- name: Kihyun Lee
  role: author
- name: Nicolas Gauriot
  role: author
- name: Kyle Frohna
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Bonggeun Shong
  role: author
- name: Kwanpyo Kim
  role: author
- name: Samuel D. Stranks
  role: author
- name: Jong-Hyun Ahn
  role: author
- name: Manish Chhowalla
  role: author
- name: Akshay Rao
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: 'molybdenum disulfide (MoS2)
    '
  schema: not_defined
- subject: MOCVD
  schema: not_defined
- subject: chemical treatment
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2025-09-25

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: ACS Nano
  issn: '19360851'
  volume: '19'
  issue: '39'
  start_page: 34698
  end_page: 34707

## Conference



## Related item



## Funding

- identifier: EP/W017091/1
  funder_name: Engineering and Physical Sciences Research Council
- identifier: WRM\FT\180009
  funder_name: Royal Society
- identifier: EP/Y015584/1
  funder_name: UK Research and Innovation
- identifier: EP/S003053/1
  funder_name: Faraday Institution
- identifier: FIRG012
  funder_name: Faraday Institution
- identifier: FIRG014
  funder_name: Faraday Institution
- identifier: FIRG018
  funder_name: Faraday Institution
- identifier: 758826 (SOLARX)
  funder_name: H2020 European Research Council
- identifier: GA 101019828-2D- LOTTO
  funder_name: H2020 European Research Council

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 4bd4b094-879d-4214-8717-8a8594b8cb48
  filename: lim-et-al-2025-dual-step-chemical-treatment-of-wafer-scale-metal-organic-chemical-vapor-deposition-grown-monolayer.pdf
  content_type: application/pdf
  size: 7773439
  md5: 930082a2a472a37140bcbc7d69d05254

## Thumbnail

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filename: lim-et-al-2025-dual-step-chemical-treatment-of-wafer-scale-metal-organic-chemical-vapor-deposition-grown-monolayer.pdf