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説明:

When two BN layers are stacked in parallel in an AB or BA arrangement, a spontaneous out-of-plane electric polarization arises due to charge transfer in the out-of-plane B–N bonds. The ferroelectric switching from AB to BA (or BA to AB) can be achieved with a relatively small out-of-plane electric field through the in-plane sliding of one atomic layer over the other. However, the optical detection of such ferroelectric switching in hBN has not yet been demonstrated. In this study, we utilize an adjacent WSe2 monolayer to detect the ferroelectric switching in BN. This dynamic coupling between a two-dimensional (2D) ferroelectric and a 2D semiconductor allows for the fundamental investigation of the ferroelectric material using a nondestructive, local optical probe, offering promising applications for compact and nonvolatile memory devices.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Article that appeared in final form in Nano Letters, copyright © 2024 American Chemical Society. To access the final published article see https://doi.org/10.1021/acs.nanolett.4c05062.

キーワード: Ferroelectric switching, Hexagonal boron nitride (hBN), WSe2 monolayer

刊行年月日: 2025-01-08

出版者: American Chemical Society (ACS)

掲載誌:

• Nano Letters (ISSN: 15306984) vol. 25 issue. 1 p. 321-326

研究助成金:

• Agence Nationale de la Recherche ANR-17-EURE-0009
• Agence Nationale de la Recherche ANR-21-ESRE-0025
• Ministry of Education, Culture, Sports, Science and Technology
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052
• Institute for Quantum Technologies in Occitanie

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.4c05062

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更新時刻: 2026-06-25 16:09:00 +0900

MDRでの公開時刻: 2026-06-25 18:29:53 +0900