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In this work, we demonstrate the electrical readout of SCD cantilever resonators for IR sensing. Metal electrodes were deposited on the surface of the diamond cantilevers, consisting of Ti/Au layers with thicknesses of 50 nm and 10 nm, respectively. The electrical readout is based on the piezoresistive effect of the metal electrodes. When the cantilever resonator vibrates at resonance, bending-induced strain changes the resistance of the metal electrode, enabling electrical detection of the mechanical resonance.
Fig. 1(a) shows an optical image of our SCD-based transducer array, which comprises four cantilever-type sensors with a cantilever length of 140 μm. The source, drain, and gate electrodes are denoted as S, D, and Gate, respectively. The resonators were actuated by an RF-driven piezoceramic element, and their resonance responses were electrically detected through the metal electrodes. Fig. 1(b) shows the resonance spectra of the transducer array measured without and with IR irradiation at Vsd = 3 V and Vp = 2 V. Resonance peaks corresponding to Sensors 1-4 are clearly observed, confirming successful electrical readout of the SCD resonator array. Upon IR irradiation, the resonance response changes, demonstrating the feasibility of the electrically read out SCD resonators for IR sensing.
This approach provides a simple and effective route toward circuit-compatible diamond MEMS sensors. The electrical readout scheme based on metal piezoresistance is attractive for integrating SCD resonators with on-chip or external electronic circuits and may be extended to other resonant sensing applications, such as magnetic, thermal, and force sensing.

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キーワード: Diamond, MEMS

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会議: 2026年 第87回応用物理学会秋季学術講演会 (2026-09-08 - 2026-09-11)

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原稿種別: 論文以外のデータ

MDR DOI: https://doi.org/10.48505/nims.8658

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更新時刻: 2026-10-14 11:38:06 +0900

MDRでの公開時刻: 2026-10-14 14:31:07 +0900