# Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

https://mdr.nims.go.jp/datasets/575c0527-225d-4519-abd6-14d9b31db681

## File

- [042110_1_5.0186319.pdf](https://mdr.nims.go.jp/filesets/f429bcda-2231-4a5e-aa4a-b405c25d9b93/download) ([Detail](https://mdr.nims.go.jp/filesets/f429bcda-2231-4a5e-aa4a-b405c25d9b93.md))
- [Supplementary_material.pdf](https://mdr.nims.go.jp/filesets/038bef00-0b0f-4f7e-833a-448234fb8c82/download) ([Detail](https://mdr.nims.go.jp/filesets/038bef00-0b0f-4f7e-833a-448234fb8c82.md))

## Id

575c0527-225d-4519-abd6-14d9b31db681

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-26T00:11:09.262871Z

## Updated at

2025-01-25T03:30:12.069273Z

## Published at

2025-01-25T03:30:13.217967Z

## Doi



## First published url

https://doi.org/10.1063/5.0186319

## Date published

2024-01-22

## Recorded date published

2024-1-22

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Using selective-area growth and selective-area etching on (−102) β-Ga2O3
    substrates to fabricate plasma-damage-free vertical fins and trenches
  title_type: original
  lang: en

## Description

- description: We have demonstrated selective-area growth and selective-area etching
    on SiO2-masked (−102) β-Ga2O3 substrates using a HCl-based halide-vapor-phase
    epitaxy system that is capable of performing both growth and gas etching without
    plasma excitation. Since the surface of the (−102) substrate is perpendicular
    to the (100) plane, which has the lowest surface energy, we were able to use both
    methods to fabricate plasma-damage-free fins and trenches with (100)-faceted vertical
    sidewalls on windows striped along the [010] direction with high processing accuracy.
    Furthermore, since the [010] window direction is aligned parallel to the majority
    of dislocations and line-shaped voids in the substrate—which extend along the
    [010] direction and could potentially act as leakage paths—such crystal defects
    are unlikely to appear on the surfaces of the resulting fins and trenches. We
    believe that these selective-area growth/etching techniques can greatly accelerate
    research on, and the development of, β-Ga2O3-based vertical/lateral devices with
    fins or trenches.
  description_type: abstract
  lang: eng

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials

## Contact agent



## Publisher

organization: Applied Phyiscs Letters

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: "(-102)"
  schema: not_defined
- subject: selective area growth
  schema: not_defined
- subject: selective area etching
  schema: not_defined

## Rights

- description: This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in akayoshi Oshima et al., Appl. Phys. Lett. 124, 042110 (2024) and may be found
    at https://doi.org/10.1063/5.0186319.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-01-25
end_date: 2025-01-25

## Journal

- title: APPLIED PHYSICS LETTERS
  issn: '00036951'
  volume: '124'
  issue: '4'
  start_page: 42110
  end_page: 42110
  article_number: '042110'

## Conference



## Related item



## Funding

- funder_name: 東電記念財団

## Instrument



## Instrument operator



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Fileset

- id: f429bcda-2231-4a5e-aa4a-b405c25d9b93
  filename: 042110_1_5.0186319.pdf
  content_type: application/pdf
  size: 2992699
  md5: ff8f42acc1dd5c63e135b0b7b606a393
- id: '038bef00-0b0f-4f7e-833a-448234fb8c82'
  filename: Supplementary_material.pdf
  content_type: application/pdf
  size: 574898
  md5: 0f4bd6436ff56ff3fca498043115d31b

## Thumbnail

fileset_id: f429bcda-2231-4a5e-aa4a-b405c25d9b93
filename: 042110_1_5.0186319.pdf