Dhruba B. Khadka
(National Institute for Materials Science
)
;
Yasuhiro Shirai
(National Institute for Materials Science)
;
Masatoshi Yanagida
(National Institute for Materials Science)
;
James W. Ryan
;
Kenjiro Miyano
(National Institute for Materials Science)
Collection
Citation
Description:
(abstract)We found that PTAA device leads to the improvement in interface layer quality, efficient carrier transport and mitigation of bulk defect activities. The analysis of temperature and intensity dependent current–voltage characteristics suggests that PEDOT:PSS device is
limited by interface and trap assisted recombination. The capacitance spectroscopy and electroluminescence revealed soothing of recombination activities as a consequence of better interface quality and shallower defect level for PTAA device. Our results consolidate that the perovskite film and interface quality and recombination activities in device are dominantly influenced by HTLs which pave a way for further enhancement in efficiency coupled with excellent interfacial carrier transport layer.
Rights:
Keyword: Perovskite, Carrier transport, Defect state, Interface quality, Recombination
Date published: 2017-08-08
Publisher: Royal Society of Chemistry (RSC)
Journal:
- Journal of Materials Chemistry C (ISSN: 20507534) vol. 5 issue. 34 p. 8819-8827
Funding:
- Ministry of Education, Culture, Sports, Science, and Technology JP16K06285
Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5126
First published URL: https://doi.org/10.1039/c7tc02822a
Related item:
Other identifier(s):
Contact agent:
Updated at: 2024-12-10 16:55:52 +0900
Published on MDR: 2024-12-10 16:55:52 +0900
| Filename | Size | |||
|---|---|---|---|---|
| Filename |
JMCC-Authors Accepted version.pdf
(Thumbnail)
application/pdf |
Size | 980 KB | Detail |