Decoupling Effects of Electrostatic Gating on Electronic Transport and Interfacial Charge-Transfer Kinetics at Few-Layer Molybdenum Disulfide

Sonal Maroo; Yun Yu; Takashi Taniguchi; Kenji Watanabe; D. Kwabena Bediako

doi:10.1021/acsnanoscienceau.2c00064

論文 Decoupling Effects of Electrostatic Gating on Electronic Transport and Interfacial Charge-Transfer Kinetics at Few-Layer Molybdenum Disulfide

Sonal Maroo ; Yun Yu ; Takashi Taniguchi (National Institute for Materials Science) ; Kenji Watanabe (National Institute for Materials Science) ; D. Kwabena Bediako

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Sonal Maroo, Yun Yu, Takashi Taniguchi, Kenji Watanabe, D. Kwabena Bediako. Decoupling Effects of Electrostatic Gating on Electronic Transport and Interfacial Charge-Transfer Kinetics at Few-Layer Molybdenum Disulfide. ACS Nanoscience Au. 2023, 3 (3), 204-210. https://doi.org/10.1021/acsnanoscienceau.2c00064

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(abstract)

The electronic properties of electrode materials play a crucial role in defining their elec- trochemical behavior in energy conversion and storage devices. The assembly of van der Waals heterostructures and fabrication into mesoscopic devices enables the dependence of electrochemical response on electronic properties to be systematically interrogated. Here, we evaluate the effect of charge carrier concentration on heterogeneous electron transfer at few layer MoS2 electrodes by combining spatially resolved electrochemical measurements with field-effect electrostatic manipulation of band alignment. Steady-state cyclic voltammograms and finite-element simulations reveal a strong modulation of the measured electrochemical response for outer-sphere charge transfer on the electrostatic gate voltage. In addition, spatially resolved voltammetric responses, obtained at a series of locations at the surface of few-layer MoS2, reveal the governing role of in-plane charge transport on the electrochemical behavior of 2D electrodes, especially at conditions of low carrier densities.

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