# 固体電解質の界面機能を利用する物理リザバーコンピューティング

https://mdr.nims.go.jp/datasets/5589ba2c-cec9-4aa9-9f46-edb6b41f138c

## File

- [電気化学会解説記事_ver2_確認原稿_提出版.pdf](https://mdr.nims.go.jp/filesets/ad797b70-f8fb-4062-bb23-3ece1bf2e545/download) ([Detail](https://mdr.nims.go.jp/filesets/ad797b70-f8fb-4062-bb23-3ece1bf2e545.md))

## Id

5589ba2c-cec9-4aa9-9f46-edb6b41f138c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-09-25T20:11:41.037519Z

## Updated at

2026-09-30T08:01:54.673826Z

## Published at

2026-09-30T09:44:32.137912Z

## Doi

https://doi.org/10.48505/nims.8631

## First published url

https://doi.org/10.5796/denkikagaku.26-fe0301

## Date published

2026-09-05

## Recorded date published

2026

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: 固体電解質の界面機能を利用する物理リザバーコンピューティング
  title_type: original
  lang: ja

## Description

- description: 本稿では，固体電解質界面におけるイオンと電子のダイナミクスを利用した神経模倣デバイス，イオンゲーティングリザバー（IGR）について概説する．IGRは，電気二重層の充放電，界面吸着などの界面状態の時間発展を物理リザバーとして用い，入力信号を高次元状態へ変換する．従来の電気化学系神経模倣デバイスが静的な抵抗値を情報として扱うのに対し，IGRは界面ダイナミクスを計算資源とする点に新規性がある．カオスの縁学習，超広帯域応答，振動センサ信号処理の実例を通じて，前処理や計算負荷を抑えたエッジAIに向けた可能性を示す．
  description_type: abstract
  lang: und

## Creator

- name: 土屋 敬志
  role: author
  orcid: https://orcid.org/0000-0002-6950-6160
  organization: National Institute for Materials Science
- name: 西岡 大貴
  role: author
  orcid: https://orcid.org/0000-0002-3369-7700
  organization: National Institute for Materials Science
- name: 並木 航
  role: author
  orcid: https://orcid.org/0000-0003-4053-7366
  organization: National Institute for Materials Science
- name: 樋口 透
  role: author
- name: 寺部 一弥
  role: author
  orcid: https://orcid.org/0000-0003-3988-3456
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: The Electrochemical Society of Japan

## Managing organization



## Keyword

- subject: reservoir computingervoir
  schema: not_defined
- subject: iontronics
  schema: not_defined
- subject: electric double layer transistor
  schema: not_defined
- subject: ion-gating reservoir
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: 電気化学
  issn: '24333263'
  volume: '94'
  issue: '3'
  start_page: 252
  end_page: 257

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## Fileset

- id: ad797b70-f8fb-4062-bb23-3ece1bf2e545
  filename: 電気化学会解説記事_ver2_確認原稿_提出版.pdf
  content_type: application/pdf
  size: 4057897
  md5: 6bcd2efff99c1bef2a6ce0494f6e90fc

## Thumbnail

fileset_id: ad797b70-f8fb-4062-bb23-3ece1bf2e545
filename: 電気化学会解説記事_ver2_確認原稿_提出版.pdf