Coherent acoustic phonons in van der Waals nanolayers and heterostructures

J. D. G. Greener; A. V. Akimov; V. E. Gusev; Z. R. Kudrynskyi; P. H. Beton; Z. D. Kovalyuk; T. Taniguchi; K. Watanabe; A. J. Kent; A. Patanè

doi:10.1103/PhysRevB.98.075408

論文 Coherent acoustic phonons in van der Waals nanolayers and heterostructures

J. D. G. Greener ; A. V. Akimov ; V. E. Gusev ; Z. R. Kudrynskyi ; P. H. Beton ; Z. D. Kovalyuk ; T. Taniguchi (National Institute for Materials Science) ; K. Watanabe (National Institute for Materials Science) ; A. J. Kent ; A. Patanè

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引用

J. D. G. Greener, A. V. Akimov, V. E. Gusev, Z. R. Kudrynskyi, P. H. Beton, Z. D. Kovalyuk, T. Taniguchi, K. Watanabe, A. J. Kent, A. Patanè. Coherent acoustic phonons in van der Waals nanolayers and heterostructures. Physical Review B. 2018, 98 (7), 075408. https://doi.org/10.1103/PhysRevB.98.075408

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(abstract)

We use picosecond ultrasonic techniques to investigate phonon transport in vdW InSe nanolayers and InSe/hBN heterostructures. Coherent acoustic phonons are generated and detected in these 2D systems and allow us to probe elastic parameters of different layers and their interfaces. In particular, our study of the elastic properties of the interface between vdW layers reveals a strong coupling over a wide range of frequencies up to 0.1 THz, offering prospects for high-frequency electronics and technologies that require control over the charge and phonon transport across an interface. In contrast, we reveal a weak coupling between the InSe nanolayers and sapphire substrates, relevant in thermoelectrics and sensing applications, which can require quasi-suspended layers.

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