説明:
(abstract)We review the fabrication and transport characterization of hexagonal boron nitride (hBN)/Bernal bilayer graphene (BLG) moiré superlattices. Due to the moiré effect, the hBN/BLG moiré superlattices exhibit an energy gap at the charge neutrality point (CNP) even in the absence of a perpendicular electric field. In BLG, the application of a perpendicular electric field tunes the energy gap at the CNP, which contrasts with single-layer graphene and is similar to the family of rhombohedral multilayer graphene. The hBN/BLG moiré superlattice is associated with non-trivial energy-band topology and a narrow energy band featuring a van Hove singularity. By employing a dual-gated device structure where both the perpendicular displacement field and the carrier density are individually controllable, systematic engineering of the energy-band structure can be achieved. The data presented here demonstrate the universality and diversity in the physics of hBN/BLG moiré superlattices.
権利情報:
This is the Accepted Manuscript version of an article accepted for publication in Journal of Physics: Condensed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-648x/ae05a5.
キーワード: bilayer graphene, hexagonal boron nitride, moiré superlattice, transport property
刊行年月日: 2025-09-29
出版者: IOP Publishing
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研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5784
公開URL: https://doi.org/10.1088/1361-648x/ae05a5
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更新時刻: 2025-09-29 09:34:43 +0900
MDRでの公開時刻: 2026-09-25 08:37:05 +0900
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hBN-BLG_review.pdf
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