# Competition between Bipolar Conduction Modes in Extrinsically <i>p</i>-Doped MoS<sub>2</sub>: Interaction with Gate Dielectric Matters

https://mdr.nims.go.jp/datasets/52a617cd-4ab2-4e74-853a-0b6da3dfcb7e

## File

- [2025A00245G_Manuscript.pdf](https://mdr.nims.go.jp/filesets/3a36cefe-c8bd-4221-8056-0d8166e247c3/download) ([Detail](https://mdr.nims.go.jp/filesets/3a36cefe-c8bd-4221-8056-0d8166e247c3.md))

## Id

52a617cd-4ab2-4e74-853a-0b6da3dfcb7e

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-02T04:39:01.405284Z

## Updated at

2026-07-06T00:47:18.281899Z

## Published at

2026-07-06T03:30:02.953494Z

## Doi



## First published url

https://doi.org/10.1021/acsnano.4c15202

## Date published

2025-01-14

## Recorded date published

2025-1-14

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: 'Competition between Bipolar Conduction Modes in Extrinsically <i>p</i>-Doped
    MoS<sub>2</sub>: Interaction with Gate Dielectric Matters'
  title_type: original
  lang: en

## Description

- description: 'With reduced dimensionality and a high surface area-to-volume ratio,
    two-dimensional (2D) semiconductors exhibit intriguing electronic properties that
    are exceptionally sensitive to surrounding environments, including directly interfacing
    gate dielectrics. These influences are tightly correlated to their inherent behavior,
    making it critical to examine when extrinsic charge carriers are intentionally
    introduced to the channel for complementary functionality. This study explores
    the physical origin of the competitive transition between intrinsic and extrinsic
    charge carrier conduction in extrinsically p-doped MoS2, highlighting the central
    role of interactions of the channel with amorphous gate dielectrics. By providing
    a pristine interface to the channel and controlling the degree of such interaction
    using hexagonal boron nitride (h-BN) spacers of different thicknesses, we determined
    three distinctive interaction modes: noncontact, proximity, and direct-contact.
    In the direct-contact mode without an h-BN spacer, charge transfer and orbital
    mixing induce ambipolar conduction in few-layer p-doped MoS2, showing an unexpected
    gate-dependent crossover between coexisting extrinsic and intrinsic conduction.
    Kelvin probe force microscopy and Raman spectroscopy confirm n-type doping in
    the channel through dielectric interactions, further supported by first-principles
    calculations identifying unpassivated silicon dangling bonds on the SiO2 surface
    as the origin of n-doping. On the contrary, depending on the thickness of the
    h-BN spacers, the noncontact mode maintains degenerate p-type conduction in the
    transfer curve, while the proximity mode enables gate-responsive p-type conduction,
    emphasizing the significant role of dielectric interactions in modulating charge
    transport. These findings underscore the importance of dielectric engineering
    in optimizing 2D semiconductor devices, particularly for improving the p-type
    transistor performance.'
  description_type: abstract
  lang: en

## Creator

- name: Kyungmin Ko
  role: author
- name: Jing Huang
  role: author
- name: Jaeeun Kwon
  role: author
- name: Mingyu Jang
  role: author
- name: Hanbin Cho
  role: author
- name: Seonguk Yang
  role: author
- name: Sungyeon Kim
  role: author
- name: Sangwoo Park
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Der-Yuh Lin
  role: author
- name: Swati Singh
  role: author
- name: Dong-Hyeok Lim
  role: author
- name: Seth Ariel Tongay
  role: author
- name: Jun Kang
  role: author
- name: Joonki Suh
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Two-dimensional (2D) semiconductor
  schema: not_defined
- subject: Gate dielectric interaction
  schema: not_defined
- subject: MoS2 transistor
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Article
    that appeared in final form in ACS Nano, copyright © 2024 American Chemical Society.
    To access the final published article, see https://doi.org/10.1021/acsnano.4c15202.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-12-26
end_date: 2025-12-26

## Journal

- title: ACS Nano
  issn: 1936086X
  volume: '19'
  issue: '1'
  start_page: 1630
  end_page: 1641

## Conference



## Related item



## Funding

- identifier: '1.240031'
  funder_name: Ulsan National Institute of Science and Technology
- identifier: 2022M3H4A1A01013228
  funder_name: National Research Foundation of Korea
- identifier: 2022M3I7A2079098
  funder_name: National Research Foundation of Korea
- identifier: RS-2023-00258309
  funder_name: National Research Foundation of Korea
- identifier: RS-2024-00336695
  funder_name: National Research Foundation of Korea
- identifier: 21H05233
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 23H02052
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: '11991060'
  funder_name: National Natural Science Foundation of China
- identifier: '12088101'
  funder_name: National Natural Science Foundation of China
- identifier: '12393831'
  funder_name: National Natural Science Foundation of China
- identifier: 2.231170.01
  funder_name: Samsung

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## Fileset

- id: 3a36cefe-c8bd-4221-8056-0d8166e247c3
  filename: 2025A00245G_Manuscript.pdf
  content_type: application/pdf
  size: 9844322
  md5: aae711b15d38ad9d38e7f4731f79f8bd

## Thumbnail

fileset_id: 3a36cefe-c8bd-4221-8056-0d8166e247c3
filename: 2025A00245G_Manuscript.pdf