Muhammad Fasih Aamir
;
Raju Chetty
(National Institute for Materials Science)
;
Jayachandran Babu
(National Institute for Materials Science)
;
Takao Mori
(National Institute for Materials Science)
説明:
(abstract)Mg3(Sb, Bi)2 based compounds exhibit promising thermoelectric (TE) performance within the 300-700 K range, making them suitable for mid-temperature applications, yet achieving optimal electrical contact between TE material and contact material is crucial. One-step sintering has emerged as a widely used technique for establishing these contacts in Mg3(Sb, Bi)2 compounds, though variations in process parameters can impact contact quality and, consequently TE conversion efficiency. Therefore, this study explores the optimization of Mg3(Sb, Bi)2 compound using spark plasma sintering with SS304 contacts at three different temperatures 973 K, 1023 K, and 1073 K. By increasing the sintering temperature from 973 K to 1073 K, establishes the good contact between the Mg3(Sb, Bi)2 and SS304 due to the improved adhesive strength. As a result, a significant reduction in the specific contact resistivity (ρc) by ~ 60% is realized, without compromising TE properties. Furthermore, replacing SS304 powder (SSp) with SS304 foil (SSf) led to more uniform and dense layers, achieving lower specific ρc of 8.2 cm2 at their interface. Consequently, a maximum conversion efficiency (ηₘₐₓ) of ~ 9.3% was obtained at a temperature difference (ΔT) of ~ 380 K for the SSf/Mg3(Sb, Bi)2/SSf sintered at 1073 K. Moreover, thermal aging test at 673 K for 30 days confirm the robustness of SSf/Mg3(Sb, Bi)2 contacts with negligible degradation of TE properties and conversion efficiency of the Mg3(Sb, Bi)2-based single TE leg.
This study highlights the importance of optimizing contact processes in TE materials to achieve stable performance, illustrating that precise control of sintering conditions can greatly improve contact quality.
権利情報:
キーワード: thermoelectric
刊行年月日: 2025-05-01
出版者: Royal Society of Chemistry (RSC)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1039/d5tc00851d
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その他の識別子:
連絡先:
更新時刻: 2025-11-11 12:30:09 +0900
MDRでの公開時刻: 2025-11-11 12:22:32 +0900
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Journal of Materials Chemistry C--Process optimization of contact interface layer for maximizing the performance of Mg3(Sb,Bi)2 based thermoelectric compounds.pdf
(サムネイル)
application/pdf |
サイズ | 3.04MB | 詳細 |