# Study of Local Band Bending in <i>n</i>-Channel In<sub>2</sub>O<sub>3</sub> Thin-Film Transistors under Gate and Drain Voltage Stress Using <i>Operando</i> Hard X-ray Photoelectron Spectroscopy

https://mdr.nims.go.jp/datasets/4f6fff5a-b36e-4e97-8744-6b220148856f

## File

- [MDR.pdf](https://mdr.nims.go.jp/filesets/0a0a8b84-e5e1-40be-84fc-11eb901cd6be/download) ([Detail](https://mdr.nims.go.jp/filesets/0a0a8b84-e5e1-40be-84fc-11eb901cd6be.md))
- [SI.pdf](https://mdr.nims.go.jp/filesets/f0000e00-7860-4a23-a2a1-07f456090522/download) ([Detail](https://mdr.nims.go.jp/filesets/f0000e00-7860-4a23-a2a1-07f456090522.md))

## Id

4f6fff5a-b36e-4e97-8744-6b220148856f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-12-08T04:42:18.616126Z

## Updated at

2026-04-30T03:01:11.491392Z

## Published at

2026-09-08T23:25:15.767343Z

## Doi

https://doi.org/10.48505/nims.5973

## First published url

https://doi.org/10.1021/acsami.5c13299

## Date published

2025-09-24

## Recorded date published

2025-9-24

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Study of Local Band Bending in <i>n</i>-Channel In<sub>2</sub>O<sub>3</sub>
    Thin-Film Transistors under Gate and Drain Voltage Stress Using <i>Operando</i>
    Hard X-ray Photoelectron Spectroscopy
  title_type: original
  lang: en

## Description

- description: "In this study, we analyze In2O3 thin-film transistors (In2O3-TFT)
    using synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES) in operando
    conditions. A bottom-gate In2O3-TFT with a high-k Al2O3 gate dielectric, grown
    on thermally oxidized silicon (SiO2/p+-Si), was examined while operating at varying
    VGS and VDS. The results reveal that the In 3d core level binding energy varies
    along the horizontal channel length, driven by the potential gradient induced
    by VDS. Furthermore, the polarity of VGS under positive VDS significantly affects
    the channel structure, and VDS influences the vertical electrostatic potential
    in the buried\r\ngate dielectric and the gate electrode. Analysis suggests that
    the primary source of drain-source leakage current (IDSS) arises from high intrinsic
    electron and defect/trap levels associated with\r\noxygen vacancies (VO2+). Additionally,
    investigation beneath the Au/Ti drain and source electrodes under different bias
    voltages reveals substantial In2O3 reduction, leading to significant indium metal
    (In0) formation. Schematic models of carrier transport mechanisms are proposed
    to explain these findings."
  description_type: abstract
  lang: und

## Creator

- name: Ibrahima Gueye
  role: author
  orcid: https://orcid.org/0000-0001-5296-3894
- name: Akira Yasui
  role: author
- name: Yasumasa Takagi
  role: author
  orcid: https://orcid.org/0000-0001-8064-3345
- name: Atsushi Ogura
  role: author
- name: Osami Sakata
  role: author
  orcid: https://orcid.org/0000-0003-2626-0161
- name: Takahiro Nagata
  role: author
  orcid: https://orcid.org/0000-0002-8591-2943

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: hard X-ray photoelectron spectroscopy
  schema: not_defined
- subject: Indium oxide
  schema: not_defined
- subject: operando
  schema: not_defined
- subject: oxide thin-film transistor
  schema: not_defined
- subject: oxide semiconductor
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in ACS Applied Materials & Interfaces, copyright ©
    2025 American Chemical Society after peer review and technical editing by the
    publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.5c13299.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-09-09
end_date: 2026-09-09

## Journal

- title: ACS Applied Materials & Interfaces
  issn: '19448244'
  volume: '17'
  issue: '38'
  start_page: 54241
  end_page: 54253

## Conference



## Related item



## Funding

- identifier: JP18J22998
  funder_name: Japan Society for the Promotion of Science
- identifier: JP20H02189
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 0a0a8b84-e5e1-40be-84fc-11eb901cd6be
  filename: MDR.pdf
  content_type: application/pdf
  size: 2634008
  md5: fc293fe16d8754b794ee8c62eb249c3b
- id: f0000e00-7860-4a23-a2a1-07f456090522
  filename: SI.pdf
  content_type: application/pdf
  size: 1646909
  md5: 19edc4b9328b929fe6af77b11e9d20c9

## Thumbnail

fileset_id: f0000e00-7860-4a23-a2a1-07f456090522
filename: SI.pdf