# Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions

https://mdr.nims.go.jp/datasets/4e1d8ccd-ac03-4797-b3fa-2af0ca391f4b

## File

- [s41377-024-01491-5.pdf](https://mdr.nims.go.jp/filesets/f6093482-181b-4b0a-aa17-db61cb74d8f6/download) ([Detail](https://mdr.nims.go.jp/filesets/f6093482-181b-4b0a-aa17-db61cb74d8f6.md))

## Id

4e1d8ccd-ac03-4797-b3fa-2af0ca391f4b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-14T04:08:42.491364Z

## Updated at

2025-02-14T07:30:28.513353Z

## Published at

2025-02-14T07:30:28.599515Z

## Doi



## First published url

https://doi.org/10.1038/s41377-024-01491-5

## Date published

2024-07-08

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Electroluminescence from pure resonant states in hBN-based vertical tunneling
    junctions
  title_type: original
  lang: en

## Description

- description: Defect centers in wide-band-gap crystals attracted considerable attention
    due to the realisations of qubits, sensors, or single photon emitters at room
    temperature. The family of these centers is constantly growing, including well-known
    examples such as nitrogen- vacancy centers in diamond, silicon-vacancy in silicon
    carbide, chromium substitutions in aluminium oxide, and many others. Unfortunately,
    such defect centers embedded in highly insulating crystals have been notoriously
    difficult to excite electrically. Herewith,we present a realisation of insulating
    light-emitting diodes based on carbon centers in hexagonal boron nitride. The
    rational design of the vertical tunnelling devices via van der Waals technology
    enabled us to control the charge dynamics related to non-radiative tunelling,
    defect-to-band electroluminescence, and intradefect electroluminescence. The fundamental
    understanding of the tunnelling events enabled us to achieve high efficiency of
    electrical excitation, which exceeded by a few orders of magnitude the efficiency
    of optical excitation in the sub-band-gap regime. A combination of a Stark effect
    and screening by band electrons provide a control knob for tuning the energy of
    emission. With this work, we solve an outstanding problem of creating electrically
    driven devices realised with defect centers in wide-band-gap crystals, which are
    relevant in the domain of optoelectronics, telecommunication, computation, or
    sensing.
  description_type: abstract
  lang: und

## Creator

- name: Magdalena Grzeszczyk
  role: author
- name: Kristina Vaklinova
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Konstantin S. Novoselov
  role: author
- name: Maciej Koperski
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Defect centers
  schema: not_defined
- subject: wide-band-gap crystals
  schema: not_defined
- subject: tunneling junctions
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: 'Light: Science & Applications'
  issn: '20477538'
  volume: '13'
  issue: '1'
  article_number: '155'

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## Chemical composition



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## Fileset

- id: f6093482-181b-4b0a-aa17-db61cb74d8f6
  filename: s41377-024-01491-5.pdf
  content_type: application/pdf
  size: 1078434
  md5: 17596060943bb5615be5e99cc0565828

## Thumbnail

fileset_id: f6093482-181b-4b0a-aa17-db61cb74d8f6
filename: s41377-024-01491-5.pdf