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説明:

We investigate the bulk photovoltaic effect in monolayer SnS using an effective tight-binding model derived from first-principles calculations. By comparing short-range and long-range hopping models, we show that the essential features of the shift current conductivity are captured by a minimal model. The shift current is decomposed into transition intensity and shift vector, enabling identification of dominant interband transitions. The comparison reveals that long-range hopping processes quantitatively modify the peak positions and magnitudes, while the short-range model retains the characteristic low-energy structure of the nonlinear response. Our findings provide a transparent framework for understanding and designing bulk photovoltaic effects in two-dimensional materials.

権利情報:

• In Copyright
  

  ©2026 The Physical Society of Japan

キーワード: Shift current, Bulk photovoltaic effect, Monolayer SnS, Tight-binding model, Nonlinear optical response

刊行年月日: 2026-07-15

出版者: Physical Society of Japan

掲載誌:

• Journal of the Physical Society of Japan (ISSN: 00319015) vol. 95 issue. 7 074802

研究助成金:

• Japan Science and Technology Corporation JPMJCR19T1
• Japan Society for the Promotion of Science JP25K01609
• Japan Society for the Promotion of Science JP22H05473
• Japan Society for the Promotion of Science JP21H01019
• Sumitomo Foundation 2401203

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6378

公開URL: https://doi.org/10.7566/jpsj.95.074802

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更新時刻: 2026-06-30 16:07:42 +0900

MDRでの公開時刻: 2026-06-30 18:29:05 +0900