# A back-to-back diode model applied to van der Waals Schottky diodes

https://mdr.nims.go.jp/datasets/4c3ddf49-effe-42d3-a1cf-b63ff7ed932c

## File

- [Cloninger_2024_J._Phys.-_Condens._Matter_36_455301.pdf](https://mdr.nims.go.jp/filesets/6bf1cde3-e581-4cee-8252-afa8dda24bf9/download) ([Detail](https://mdr.nims.go.jp/filesets/6bf1cde3-e581-4cee-8252-afa8dda24bf9.md))

## Id

4c3ddf49-effe-42d3-a1cf-b63ff7ed932c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-04T06:56:48.233657Z

## Updated at

2025-02-05T03:30:37.507132Z

## Published at

2025-02-05T03:30:37.626142Z

## Doi



## First published url

https://doi.org/10.1088/1361-648x/ad69ef

## Date published

2024-11-13

## Recorded date published

2024-11-13

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: A back-to-back diode model applied to van der Waals Schottky diodes
  title_type: original
  lang: en

## Description

- description: "The use of metal and semimetal van der Waals contacts for 2D semiconducting
    devices has led to remarkable device optimizations. In comparison with conventional
    thin-film metal deposition, a reduction in Fermi level pinning at the contact
    interface for van der Waals contacts results in, generally, lower contact resistances
    and higher mobilities. Van der Waals contacts also lead to Schottky barriers that
    follow the Schottky–Mott rule, allowing barrier estimates on material properties
    alone. In this study, we present a double Schottky barrier model and apply it
    to a barrier tunable all van der Waals transistor. In a molybdenum disulfide (MoS2)
    transistor with graphene and few-layer graphene contacts, we find that the model
    can be applied to extract Schottky barrier heights that agree with the Schottky–Mott
    rule from simple two-terminal current–voltage measurements at room temperature.
    Furthermore, we show tunability of the Schottky barrier in-situ using a regional
    contact gate. Our results highlight the utility of a basic back-to-back diode
    model in extracting device characteristics in all van der Waals transistors.\r\nKeywords:
    diodes, back-to-back, model, applied, MoS2, van der Waals"
  description_type: abstract
  lang: und

## Creator

- name: Jeffrey A Cloninger
  role: author
- name: Raine Harris
  role: author
- name: Kristine L Haley
  role: author
- name: Randy M Sterbentz
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: Joshua O Island
  role: author
  orcid: https://orcid.org/0000-0002-6074-9414

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Van der Waals contacts
  schema: not_defined
- subject: Schottky barrier
  schema: not_defined
- subject: MoS2 transistor
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: 'Journal of Physics: Condensed Matter'
  issn: '09538984'
  volume: '36'
  issue: '45'
  start_page: 455301

## Conference



## Related item



## Funding

- identifier: '2047509'
  funder_name: Division of Materials Research
- identifier: W911NF2310160
  funder_name: Army Research Office
- identifier: 21H05233
  funder_name: JSPS KAKENHI

## Instrument



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## Chemical composition



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## Fileset

- id: 6bf1cde3-e581-4cee-8252-afa8dda24bf9
  filename: Cloninger_2024_J._Phys.-_Condens._Matter_36_455301.pdf
  content_type: application/pdf
  size: 872418
  md5: 8f9a3e128b0f39d8bc2a748bbd492a73

## Thumbnail

fileset_id: 6bf1cde3-e581-4cee-8252-afa8dda24bf9
filename: Cloninger_2024_J._Phys.-_Condens._Matter_36_455301.pdf